High power (> 5 W) lambda similar to 9.6 mu m tapered quantum cascade lasers grown by OMVPE

AlInAs/GaInAs superlattices (SLs) with barrier and well layers of various thicknesses were grown by organometallic vapor phase epitaxy to optimize growth of quantum cascade lasers (QCLs). High-resolution x-ray diffraction data of nominally lattice-matched SLs show a systematic shift toward more comp...

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Bibliographic Details
Published in:Journal of crystal growth 2013-05, Vol.370, p.212-216
Main Authors: Wang, CA, Goyal, A K, Menzel, S, Calawa, DR, Spencer, M, Connors, M K, McNulty, D, Sanchez, A, Turner, G W, Capasso, F
Format: Article
Language:English
Subjects:
Barriers
Crystal growth
Diffraction
Gain
Phase shift
Quantum cascade lasers
Vapor phase epitaxy
X-rays
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Summary:AlInAs/GaInAs superlattices (SLs) with barrier and well layers of various thicknesses were grown by organometallic vapor phase epitaxy to optimize growth of quantum cascade lasers (QCLs). High-resolution x-ray diffraction data of nominally lattice-matched SLs show a systematic shift toward more compressively strained SLs as the barrier/well layer thicknesses are decreased below about 10 nm. This shift is attributed to In surface segregation in both AlInAs and GaInAs. This shift is compensated for in the growth of ultra-thin layers in QCL structures. QCLs with tapered gain regions and emitting at 9.6 mu m are demonstrated with peak power as high as 5.3 W from one facet at 20 degree C.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2012.11.045