Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in beta -FeSi sub(2) films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy

beta -FeSi sub(2) films were epitaxially grown by atomic-hydrogen-assisted molecular beam epitaxy (MBE) on high-resistive n-type floating-zone (FZ) Si(1 1 1)( rho > 1000 Omega cm). They showed n-type conduction with a reduced electron concentration of an order of 10 super(16) cm super(-3) at room...

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Bibliographic Details
Published in:Journal of crystal growth 2013-09, Vol.378, p.365-367
Main Authors: Funase, Y, Suzuno, M, Toko, K, Suemasu, T
Format: Article
Language:English
Subjects:
Carrier density
Crystal growth
Epitaxial growth
Hole density
Irradiation
Molecular beam epitaxy
Reduction
Silicon substrates
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Summary:beta -FeSi sub(2) films were epitaxially grown by atomic-hydrogen-assisted molecular beam epitaxy (MBE) on high-resistive n-type floating-zone (FZ) Si(1 1 1)( rho > 1000 Omega cm). They showed n-type conduction with a reduced electron concentration of an order of 10 super(16) cm super(-3) at room temperature (RT). In contrast, beta -FeSi sub(2) films prepared without atomic hydrogen or prepared with molecular hydrogen showed p-type conduction with a large hole density of over 10 super(18) cm super(3). These results show that the atomic-hydrogen irradiation is an effective means to reduce the residual carrier concentration in undoped beta -FeSi sub(2) films.
ISSN:0022-0248