A Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity

A detailed numerical study of subwavelength nanogratings behavior to enhance the light absorption characteristics in plasmonic-based metal-semiconductor-metal photodetectors (MSM-PDs) is performed by implementation of 2D finite-difference time-domain (FDTD) algorithm. Due to the structure design and...

Full description

Saved in:
Bibliographic Details
Published in:Advances in OptoElectronics (Hindawi) 2013-01, Vol.2013 (2013), p.1-10
Main Authors: Das, Narottam, Fadakar Masouleh, Farzaneh, Mashayekhi, Hamid Reza
Format: Article
Language:English
Subjects:
Devices
Gallium arsenide
Gallium arsenides
Mathematical analysis
Mathematical models
Nanocomposites
Nanomaterials
Nanostructure
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-a533t-e5c16b483414dbf64514e5405f1b95358532143b3ada05d2bf4048f2db5cd1d33
cites cdi_FETCH-LOGICAL-a533t-e5c16b483414dbf64514e5405f1b95358532143b3ada05d2bf4048f2db5cd1d33
container_end_page 10
container_issue 2013
container_start_page 1
container_title Advances in OptoElectronics (Hindawi)
container_volume 2013
creator Das, Narottam
Fadakar Masouleh, Farzaneh
Mashayekhi, Hamid Reza
description A detailed numerical study of subwavelength nanogratings behavior to enhance the light absorption characteristics in plasmonic-based metal-semiconductor-metal photodetectors (MSM-PDs) is performed by implementation of 2D finite-difference time-domain (FDTD) algorithm. Due to the structure design and changes in the device physical parameters, various devices with different geometries are simulated and compared. Parameters like nano-grating height and duty cycle (DC) are optimized for rectangular and taper subwavelength metal nanogratings on GaAs substrate and their impact on light absorption below the diffraction limits are confirmed. The calculated light enhancement is ~32.7-times for an optimized device in comparison with a conventional MSM-PD. This enhancement is attributed to the plasmonic effects in the near-field region.
doi_str_mv 10.1155/2013/793253
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1464550134</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1464550134</sourcerecordid><originalsourceid>FETCH-LOGICAL-a533t-e5c16b483414dbf64514e5405f1b95358532143b3ada05d2bf4048f2db5cd1d33</originalsourceid><addsrcrecordid>eNqN0c1LwzAYBvAgCo65k2chR1HqkuZj7bEbugkOhx_graRNYqNdU5PMsf_ejsquenh538OP5_A-AJxjdIMxY-MYYTKepCRm5AgMME8mEeM0OT7c5O0UjLz_QAhhivkk5QPwmcGZXbdOVarx5lvBrBH1zhsPrYarWvi1bUzpo6nwSsK5yDxcPi-jVWWDlSqoMlgHdTcL817BqWjk1shQRStn5aYM8En51u6TTdidgRMtaq9Gv3sIXu9uX2aL6OFxfj_LHiLBCAmRYiXmBU0IxVQWmlOGqWIUMY2LlBGWMBJjSgoipEBMxoWmiCY6lgUrJZaEDMFln9s6-7VRPuRr40tV16JRduNzTLtM1n2L_o9SHndvHYLrnpbOeu-Uzltn1sLtcozyfQH5voC8L6DTV72uTCPF1vyBL3qsOqK0OGCaJoxj8gMxSI3l</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1464546279</pqid></control><display><type>article</type><title>A Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity</title><source>Wiley Online Library Open Access</source><source>Publicly Available Content (ProQuest)</source><creator>Das, Narottam ; Fadakar Masouleh, Farzaneh ; Mashayekhi, Hamid Reza</creator><contributor>Huang, Jung</contributor><creatorcontrib>Das, Narottam ; Fadakar Masouleh, Farzaneh ; Mashayekhi, Hamid Reza ; Huang, Jung</creatorcontrib><description>A detailed numerical study of subwavelength nanogratings behavior to enhance the light absorption characteristics in plasmonic-based metal-semiconductor-metal photodetectors (MSM-PDs) is performed by implementation of 2D finite-difference time-domain (FDTD) algorithm. Due to the structure design and changes in the device physical parameters, various devices with different geometries are simulated and compared. Parameters like nano-grating height and duty cycle (DC) are optimized for rectangular and taper subwavelength metal nanogratings on GaAs substrate and their impact on light absorption below the diffraction limits are confirmed. The calculated light enhancement is ~32.7-times for an optimized device in comparison with a conventional MSM-PD. This enhancement is attributed to the plasmonic effects in the near-field region.</description><identifier>ISSN: 1687-563X</identifier><identifier>EISSN: 1687-5648</identifier><identifier>DOI: 10.1155/2013/793253</identifier><language>eng</language><publisher>Cairo, Egypt: Hindawi Puplishing Corporation</publisher><subject>Devices ; Gallium arsenide ; Gallium arsenides ; Mathematical analysis ; Mathematical models ; Nanocomposites ; Nanomaterials ; Nanostructure</subject><ispartof>Advances in OptoElectronics (Hindawi), 2013-01, Vol.2013 (2013), p.1-10</ispartof><rights>Copyright © 2013 Narottam Das et al.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a533t-e5c16b483414dbf64514e5405f1b95358532143b3ada05d2bf4048f2db5cd1d33</citedby><cites>FETCH-LOGICAL-a533t-e5c16b483414dbf64514e5405f1b95358532143b3ada05d2bf4048f2db5cd1d33</cites><orcidid>0000-0002-3396-4194 ; 0000-0002-3230-8814</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902,36990</link.rule.ids></links><search><contributor>Huang, Jung</contributor><creatorcontrib>Das, Narottam</creatorcontrib><creatorcontrib>Fadakar Masouleh, Farzaneh</creatorcontrib><creatorcontrib>Mashayekhi, Hamid Reza</creatorcontrib><title>A Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity</title><title>Advances in OptoElectronics (Hindawi)</title><description>A detailed numerical study of subwavelength nanogratings behavior to enhance the light absorption characteristics in plasmonic-based metal-semiconductor-metal photodetectors (MSM-PDs) is performed by implementation of 2D finite-difference time-domain (FDTD) algorithm. Due to the structure design and changes in the device physical parameters, various devices with different geometries are simulated and compared. Parameters like nano-grating height and duty cycle (DC) are optimized for rectangular and taper subwavelength metal nanogratings on GaAs substrate and their impact on light absorption below the diffraction limits are confirmed. The calculated light enhancement is ~32.7-times for an optimized device in comparison with a conventional MSM-PD. This enhancement is attributed to the plasmonic effects in the near-field region.</description><subject>Devices</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><issn>1687-563X</issn><issn>1687-5648</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqN0c1LwzAYBvAgCo65k2chR1HqkuZj7bEbugkOhx_graRNYqNdU5PMsf_ejsquenh538OP5_A-AJxjdIMxY-MYYTKepCRm5AgMME8mEeM0OT7c5O0UjLz_QAhhivkk5QPwmcGZXbdOVarx5lvBrBH1zhsPrYarWvi1bUzpo6nwSsK5yDxcPi-jVWWDlSqoMlgHdTcL817BqWjk1shQRStn5aYM8En51u6TTdidgRMtaq9Gv3sIXu9uX2aL6OFxfj_LHiLBCAmRYiXmBU0IxVQWmlOGqWIUMY2LlBGWMBJjSgoipEBMxoWmiCY6lgUrJZaEDMFln9s6-7VRPuRr40tV16JRduNzTLtM1n2L_o9SHndvHYLrnpbOeu-Uzltn1sLtcozyfQH5voC8L6DTV72uTCPF1vyBL3qsOqK0OGCaJoxj8gMxSI3l</recordid><startdate>20130101</startdate><enddate>20130101</enddate><creator>Das, Narottam</creator><creator>Fadakar Masouleh, Farzaneh</creator><creator>Mashayekhi, Hamid Reza</creator><general>Hindawi Puplishing Corporation</general><general>Hindawi Publishing Corporation</general><scope>ADJCN</scope><scope>AHFXO</scope><scope>RHU</scope><scope>RHW</scope><scope>RHX</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><orcidid>https://orcid.org/0000-0002-3396-4194</orcidid><orcidid>https://orcid.org/0000-0002-3230-8814</orcidid></search><sort><creationdate>20130101</creationdate><title>A Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity</title><author>Das, Narottam ; Fadakar Masouleh, Farzaneh ; Mashayekhi, Hamid Reza</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a533t-e5c16b483414dbf64514e5405f1b95358532143b3ada05d2bf4048f2db5cd1d33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Devices</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Mathematical analysis</topic><topic>Mathematical models</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Das, Narottam</creatorcontrib><creatorcontrib>Fadakar Masouleh, Farzaneh</creatorcontrib><creatorcontrib>Mashayekhi, Hamid Reza</creatorcontrib><collection>الدوريات العلمية والإحصائية - e-Marefa Academic and Statistical Periodicals</collection><collection>معرفة - المحتوى العربي الأكاديمي المتكامل - e-Marefa Academic Complete</collection><collection>Hindawi Publishing Complete</collection><collection>Hindawi Publishing Subscription Journals</collection><collection>Hindawi Publishing Open Access Journals</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>Advances in OptoElectronics (Hindawi)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Das, Narottam</au><au>Fadakar Masouleh, Farzaneh</au><au>Mashayekhi, Hamid Reza</au><au>Huang, Jung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity</atitle><jtitle>Advances in OptoElectronics (Hindawi)</jtitle><date>2013-01-01</date><risdate>2013</risdate><volume>2013</volume><issue>2013</issue><spage>1</spage><epage>10</epage><pages>1-10</pages><issn>1687-563X</issn><eissn>1687-5648</eissn><abstract>A detailed numerical study of subwavelength nanogratings behavior to enhance the light absorption characteristics in plasmonic-based metal-semiconductor-metal photodetectors (MSM-PDs) is performed by implementation of 2D finite-difference time-domain (FDTD) algorithm. Due to the structure design and changes in the device physical parameters, various devices with different geometries are simulated and compared. Parameters like nano-grating height and duty cycle (DC) are optimized for rectangular and taper subwavelength metal nanogratings on GaAs substrate and their impact on light absorption below the diffraction limits are confirmed. The calculated light enhancement is ~32.7-times for an optimized device in comparison with a conventional MSM-PD. This enhancement is attributed to the plasmonic effects in the near-field region.</abstract><cop>Cairo, Egypt</cop><pub>Hindawi Puplishing Corporation</pub><doi>10.1155/2013/793253</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0002-3396-4194</orcidid><orcidid>https://orcid.org/0000-0002-3230-8814</orcidid><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 1687-563X
ispartof Advances in OptoElectronics (Hindawi), 2013-01, Vol.2013 (2013), p.1-10
issn 1687-563X
1687-5648
language eng
recordid cdi_proquest_miscellaneous_1464550134
source Wiley Online Library Open Access; Publicly Available Content (ProQuest)
subjects Devices
Gallium arsenide
Gallium arsenides
Mathematical analysis
Mathematical models
Nanocomposites
Nanomaterials
Nanostructure
title A Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T23%3A44%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Comprehensive%20Analysis%20of%20Plasmonics-Based%20GaAs%20MSM-Photodetector%20for%20High%20Bandwidth-Product%20Responsivity&rft.jtitle=Advances%20in%20OptoElectronics%20(Hindawi)&rft.au=Das,%20Narottam&rft.date=2013-01-01&rft.volume=2013&rft.issue=2013&rft.spage=1&rft.epage=10&rft.pages=1-10&rft.issn=1687-563X&rft.eissn=1687-5648&rft_id=info:doi/10.1155/2013/793253&rft_dat=%3Cproquest_cross%3E1464550134%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-a533t-e5c16b483414dbf64514e5405f1b95358532143b3ada05d2bf4048f2db5cd1d33%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1464546279&rft_id=info:pmid/&rfr_iscdi=true