Effect of Copper Doping on Structural, Dielectric and DC Electrical Resistivity Properties of BaTiO sub(3)

• Published in: Advances in materials physics and chemistry 2013-03, Vol.3 (1), p.77-82
• Main Authors: Rao, Moganti Venkata Someswara, Ramesh, Kocharlakota Venkata, Ramesh, Majeti Naga Venkata, Rao, Bonthula Srinivasa
• Format: Article
• Language: English
• Subjects: Barium titanates; Concentration (composition); Copper; COPPER OXIDE; Curie temperature; Dielectric loss; Dielectric properties; Diffraction patterns; DOPING; ELECTRICAL CONDUCTIVITY; Electrical resistivity; INSULATION (ELECTRICAL); PROPERTIES
• ISSN: 2162-531X; 2162-5328
• DOI: 10.4236/ampc.2013.31012

The modified BaTiO sub(3) ferroelectric materials are suitable for pyroelectric applications. This paper reports the structural, dielectric and electrical properties on copper influence in BaTiO sub(3 )when it was substituted site "A" of sub( )perovskite structure of BaTiO sub(3). Copper has been chosen for modified BaTiO sub(3) with different concentrations with stoichiometry Ba sub(1-x)Cu sub(x)TiO sub(3), where x = 0.01%, 0.02%, 0.03% and 0.04%. The X-ray diffraction patterns of the samples doped with different composition of CuO are found to be that the positions and intensities of the diffraction peaks are similar and no secondary phases were observed. The Curie's temperature (T sub(c)) for all CuO doped BaTiO sub(3) with were found to be in the range of 120 degree C to 125 degree C. The frequency dependence of relative permittivity ( epsilon sub(r)) and dielectric loss (Tan delta ) of Ba sub(1-x)Cu sub(x)TiO sub(3) samples at room temperature were reported in the range 100 KHz - 1 MHz. The temperature dependence of D.C electrical resistivity studies were reported for all samples indicating that the participation of Cu super(2+)-Cu super(+) ions in the conduction process around their Curie's temperature.