MBE grown Ga sub(2)O sub(3) and its power device applications

N-type gallium oxide (Ga sub(2)O sub(3)) homoepitaxial thick films were grown on beta -Ga sub(2)O sub(3) (010) substrates by molecular beam epitaxy. The epitaxial growth rate was increased by more than 10 times by changing from the (100) plane to the (010) plane. The carrier concentration of the epi...

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Published in:Journal of crystal growth 2013-09, Vol.378, p.591-595
Main Authors: Sasaki, K, Higashiwaki, M, Kuramata, A, Masui, T, Yamakoshi, S
Format: Article
Language:English
Subjects:
Breakdown
Devices
Drains
Electric potential
MESFETs
Molecular beam epitaxy
Planes
Voltage
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Higashiwaki, M
Kuramata, A
Masui, T
Yamakoshi, S
description N-type gallium oxide (Ga sub(2)O sub(3)) homoepitaxial thick films were grown on beta -Ga sub(2)O sub(3) (010) substrates by molecular beam epitaxy. The epitaxial growth rate was increased by more than 10 times by changing from the (100) plane to the (010) plane. The carrier concentration of the epitaxial layers could be varied within the range of 10 super(16)-10 super(19) cm super(-3) by changing the Sn doping concentration. Schottky barrier diodes (SBDs) and metal-semiconductor field-effect transistors (MESFETs) on beta -Ga sub(2)O sub(3) homoepitaxial layers were demonstrated for the first time. The SBDs exhibited good device characteristics such as an ideality factor of 1.13, and high breakdown voltage about 125 V. The MESFETs also exhibited excellent characteristics such as a perfect pinch-off of the drain current, off-state breakdown voltage over 250 V, high on/off drain current ratio of around 10 super(4), and small gate leakage current. These device characteristics clearly indicate the great potential of Ga sub(2)O sub(3) as a high-power device material.
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subjects Breakdown
Devices
Drains
Electric potential
MESFETs
Molecular beam epitaxy
Planes
Voltage
title MBE grown Ga sub(2)O sub(3) and its power device applications
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