Deep single step vertical ICP-RIE etching of ion beam sputter deposited SiO sub(2)/Si multilayer stacks

Deep vertical etching of a 10 mu m thick SiO sub(2)/Si multilayer stack is presented. The stack was deposited by ion beam sputtering. To etch the stack, an octafluorocyclobutane (C sub(4)F sub(8))-oxygen (O sub(2)) based inductively coupled plasma - reactive ion etching (ICP-RIE) process was develop...

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Bibliographic Details
Published in:Microelectronic engineering 2014-01, Vol.113, p.70-73
Main Authors: Messow, F, Welch, C, Eifert, A, Ang, W C, Hoe, N S, Kusserow, T, Hillmer, H
Format: Article
Language:English
Subjects:
Chromium
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Summary:Deep vertical etching of a 10 mu m thick SiO sub(2)/Si multilayer stack is presented. The stack was deposited by ion beam sputtering. To etch the stack, an octafluorocyclobutane (C sub(4)F sub(8))-oxygen (O sub(2)) based inductively coupled plasma - reactive ion etching (ICP-RIE) process was developed. The recipe shows very similar etching rates for silicon dioxide (SiO sub(2)) and silicon (Si); thus it can be implemented as a simple one step etching process. In order to protect the stack properly during the etching, a durable hard mask is required. Investigations of the deposition of such a mask, using chromium (Cr) deposited by electron beam physical vapour deposition (EBPVD), are also presented.
ISSN:0167-9317