UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes

We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, 150, 200 and 250 ° C. The fabricated ZnO (n)/Si (p) photodetectors (ZnO-Si-PDs)...

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Bibliographic Details
Published in:Journal of optics (2010) 2013-10, Vol.15 (10), p.105002-1-5
Main Authors: Alkis, Sabri, Tekcan, Burak, Nayfeh, Ammar, Okyay, Ali Kemal
Format: Article
Language:English
Subjects:
atomic layer deposition
Diodes
photodiodes
ZnO
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Summary:We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, 150, 200 and 250 ° C. The fabricated ZnO (n)/Si (p) photodetectors (ZnO-Si-PDs) show good electrical rectification characteristics with ON OFF ratios reaching up to 103. Under UV (350 nm wavelength) and visible (475 nm wavelength) light illumination, the ZnO-Si-PDs give photoresponsivity values of 30-37 mA W−1 and 74-80 mA W−1 at 0.5 V reverse bias, respectively. Photoluminescence (PL) spectra of ALD grown ZnO thin films are used to support the results.
ISSN:2040-8978
2040-8986
DOI:10.1088/2040-8978/15/10/105002