Microstructure, surface morphology and optical properties of N-incorporated Ga(2)O(3) thin films on sapphire substrates

N-incorporated Ga(2)O(3) films were successfully prepared on sapphire substrates in Ar-N(2) gas mixtures by radio frequency magnetron sputtering. The influence of N(2) gas flux on microstructure, surface morphology and optical properties of N-incorporated Ga(2)O(3) films was analyzed in detail. The...

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Bibliographic Details
Published in:Journal of alloys and compounds 2013-12, Vol.580, p.517-521
Main Authors: Sun, Rui, Wang, Gui-Gen, Zhang, Hua-Yu, Han, Jie-Cai, Wang, Xin-Zhong, Cui, Lin, Kuang, Xu-Ping, Zhu, Can, Jin, Lei
Format: Article
Language:English
Subjects:
Atomic force microscopy
Crystal structure
Flux
Magnetron sputtering
Microstructure
Morphology
Optical properties
Sapphire
Thin films
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Summary:N-incorporated Ga(2)O(3) films were successfully prepared on sapphire substrates in Ar-N(2) gas mixtures by radio frequency magnetron sputtering. The influence of N(2) gas flux on microstructure, surface morphology and optical properties of N-incorporated Ga(2)O(3) films was analyzed in detail. The films have better crystalline quality after nitrogen incorporating properly, while keeping their original beta-Ga(2)O(3) crystalline structure. The surface morphology of the N-incorporated Ga(2)O(3) films was investigated by atomic force microscopy (AFM). The photoluminescence spectra consisted of ultraviolet emission peak and green emission band were also observed and discussed. The optical transmittance of the as-deposited N-incorporated Ga(2)O(3) films exceeds 80% in the visible range. The optical band gap decreases with increasing the N(2) gas flux, resulting from the formation of Ga-N bonds.
ISSN:0925-8388