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Paramagnetic Nitronyl Nitroxide Radicals on Al2O3(11–20) Single Crystals: Nanoscale Assembly, Morphology, Electronic Structure, And Paramagnetic Character toward Future Applications

Aiming at future technological applications, we describe the interface and the thin film processes of a pyrene-substituted nitronyl nitroxide radical deposited on Al2O3(11–20) single crystals. Electronic properties, chemical environment at the interface, and morphology of the thin films have been in...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2013-12, Vol.5 (24), p.13006-13011
Main Authors: Abb, Sabine, Savu, Sabine-A, Caneschi, Andrea, Chassé, Thomas, Casu, M. Benedetta
Format: Article
Language:English
Online Access:Get full text
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Summary:Aiming at future technological applications, we describe the interface and the thin film processes of a pyrene-substituted nitronyl nitroxide radical deposited on Al2O3(11–20) single crystals. Electronic properties, chemical environment at the interface, and morphology of the thin films have been investigated by a multitechnique approach. Spectroscopic and morphologic analyses indicate a Stranski–Krastanov growth mode and weak physisorption of the molecules on the surface. The deposition does not affect the paramagnetic character of the molecules. The results presented in this paper show not only that the investigated system is a promising candidate as a model for understanding thin film processes in purely organic-based magnets, but its characteristics are worth its future use in electronics, because the radical character of the molecules is completely preserved in the thin films.
ISSN:1944-8244
1944-8252
DOI:10.1021/am403853y