Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

A fully analytical surface-potential-based drain current model for amorphous InGaZnO (α-IGZO) thin film transistors (TFTs) has been developed based on a Gaussian distribution of subgap states, with the central energy fixed at the conduction band edge, which is approximated by two exponential distrib...

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Bibliographic Details
Published in:Journal of applied physics 2013-11, Vol.114 (18)
Main Authors: Tsormpatzoglou, A., Hastas, N. A., Choi, N., Mahmoudabadi, F., Hatalis, M. K., Dimitriadis, C. A.
Format: Article
Language:English
Subjects:
Applied physics
Circuit design
Conduction bands
Electric fields
Empirical analysis
Indium gallium zinc oxide
Normal distribution
Semiconductor devices
Thin film transistors
Thin films
Transistors
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Summary:A fully analytical surface-potential-based drain current model for amorphous InGaZnO (α-IGZO) thin film transistors (TFTs) has been developed based on a Gaussian distribution of subgap states, with the central energy fixed at the conduction band edge, which is approximated by two exponential distributions. This model includes both drift and diffusion components to describe the drain current in all regions of operation. Using an empirical mobility relationship that depends on both horizontal and vertical electric field, it is demonstrated that the model describes accurately the experimental transfer and output characteristics, making the model suitable for the design of circuits using α-IGZO TFTs.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4831665