Facile Fabrication of Free-Standing Light Emitting Diode by Combination of Wet Chemical Etchings

Free-standing GaN light-emitting diode (LED) structure with high crystalline quality was fabricated by combining electrochemical and photoelectrochemical etching followed by regrowth of LED structure and subsequent mechanical detachment from a substrate. The structural quality and composition of the...

Full description

Saved in:
Bibliographic Details
Published in:ACS applied materials & interfaces 2014-01, Vol.6 (2), p.985-989
Main Authors: Jang, Lee-Woon, Jeon, Dae-Woo, Chung, Tae-Hoon, Polyakov, Alexander Y, Cho, Han-Su, Yun, Jin-Hyeon, Ju, Jin-Woo, Baek, Jong-Hyeob, Choi, Joo-Won, Lee, In-Hwan
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Free-standing GaN light-emitting diode (LED) structure with high crystalline quality was fabricated by combining electrochemical and photoelectrochemical etching followed by regrowth of LED structure and subsequent mechanical detachment from a substrate. The structural quality and composition of the regrown LED film thus produced was similar to standard LED, but the photoluminescence and electroluminescence intensity of the LED structures on the etched template were several times higher than for standard LED. The performance enhancement was attributable to additional light scattering and improved crystalline quality as a result of the combined etching scheme.
ISSN:1944-8244
1944-8252
DOI:10.1021/am404285s