Observation of edge transport in the disordered regime of topologically insulating InAs/GaSb quantum wells

We observe edge transport in the topologically insulating InAs/GaSb system in the disordered regime. Using asymmetric current paths we show that conduction occurs exclusively along the device edge, exhibiting a large Hall signal at zero magnetic fields, while for symmetric current paths, the conduct...

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Bibliographic Details
Published in:Physical review letters 2014-01, Vol.112 (2), p.026602-026602, Article 026602
Main Authors: Knez, Ivan, Rettner, Charles T, Yang, See-Hun, Parkin, Stuart S P, Du, Lingjie, Du, Rui-Rui, Sullivan, Gerard
Format: Article
Language:English
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Summary:We observe edge transport in the topologically insulating InAs/GaSb system in the disordered regime. Using asymmetric current paths we show that conduction occurs exclusively along the device edge, exhibiting a large Hall signal at zero magnetic fields, while for symmetric current paths, the conductance between the two mesoscopicly separated probes is quantized to 2e2/h. Both quantized and self-averaged transport show resilience to magnetic fields, and are temperature independent for temperatures between 20 mK and 1 K.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.112.026602