High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer

We demonstrate raised source/drain InAs/In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors incorporating a vertical spacer in the high-field region between the channel and the drain. The spacer significantly reduces off-state leakage at a high drain bias (VDS) without increasing the s...

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Bibliographic Details
Published in:Applied physics letters 2013-12, Vol.103 (23)
Main Authors: Lee, Sanghoon, Huang, Cheng-Ying, Cohen-Elias, Doron, Law, Jeremy J. M., Chobpattanna, Varistha, Krämer, Stephan, Thibeault, Brian J., Mitchell, William, Stemmer, Susanne, Gossard, Arthur C., Rodwell, Mark J. W.
Format: Article
Language:English
Subjects:
Applied physics
Channels
Indium arsenides
Leakage
MOSFETs
Semiconductor devices
Transconductance
Transistors
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Summary:We demonstrate raised source/drain InAs/In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors incorporating a vertical spacer in the high-field region between the channel and the drain. The spacer significantly reduces off-state leakage at a high drain bias (VDS) without increasing the source/drain contact pitch. Subsequently, thinning the InAs layer within the channel further reduces the off-state leakage and subthreshold swing (SS). At ∼60 nm gate length and VDS = 0.5 V, devices with a 6 nm/3 nm InAs/In0.53Ga0.47As channel show 2.7 mS/μm peak transconductance (gm) and 125 mV/dec SS, while devices with a 4.5 nm/3 nm InAs/In0.53Ga0.47As channel show 2.4 mS/μm peak gm and 96 mV/dec SS.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4838660