Rapid measurement of substrate temperatures by frequency-domain low-coherence interferometry

Rapid high-precision temperature monitoring systems for silicon wafers applicable even during plasma processing have been developed using frequency-domain low-coherence interferometry without a reference mirror. It was found to have a precision of 0.04 °C, a response time of 1 ms, and a large tolera...

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Bibliographic Details
Published in:Applied physics letters 2013-10, Vol.103 (18)
Main Authors: Tsutsumi, Takayoshi, Ohta, Takayuki, Ishikawa, Kenji, Takeda, Keigo, Kondo, Hiroki, Sekine, Makoto, Hori, Masaru, Ito, Masafumi
Format: Article
Language:English
Subjects:
Interferometry
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Summary:Rapid high-precision temperature monitoring systems for silicon wafers applicable even during plasma processing have been developed using frequency-domain low-coherence interferometry without a reference mirror. It was found to have a precision of 0.04 °C, a response time of 1 ms, and a large tolerance to mechanical vibrations and fiber vending when monitoring the temperature of commercial Si wafers. The performance is a substantial improvement over the previous precision of 0.11 °C measured in a few seconds using a time-domain method. It is, therefore, a powerful real-time technique to monitor rapidly varying wafer temperatures with high precision.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4827426