Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment

An abnormal sub-threshold leakage current is observed at high temperature in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). This phenomenon occurs due to a reduced number of defects in the device's a-IGZO active layer after the device has undergone N2O plasma treatment...

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Bibliographic Details
Published in:Journal of applied physics 2013-11, Vol.114 (20)
Main Authors: Jhu, Jhe-Ciou, Chang, Ting-Chang, Chang, Geng-Wei, Tai, Ya-Hsiang, Tsai, Wu-Wei, Chiang, Wen-Jen, Yan, Jing-Yi
Format: Article
Language:English
Subjects:
Applied physics
Bonding strength
Defects
Gallium
Indium
Indium gallium zinc oxide
Leakage current
Maintenance
Nitrous oxide
Oxygen atoms
Plasma
Semiconductor devices
Temperature dependence
Thin film transistors
Thin films
Transistors
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Summary:An abnormal sub-threshold leakage current is observed at high temperature in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). This phenomenon occurs due to a reduced number of defects in the device's a-IGZO active layer after the device has undergone N2O plasma treatment. Experimental verification shows that the N2O plasma treatment enhances the thin film bonding strength, thereby suppressing the formation of temperature-dependent holes, which are generated above 400 K by oxygen atoms leaving their original sites. The N2O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N2O plasma treatment is much lower than that in as-fabricated devices. The N2O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4832327