Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy

The integration of zincblende semiconductors on silicon demands for a real-time control of the crucial steps of epitaxial growth process at a microscopic level. Optical probes, being non-invasive, are very useful in monitoring such processes at a microscopic level. By using the reflectance anisotrop...

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Bibliographic Details
Published in:Journal of applied physics 2013-11, Vol.114 (17)
Main Authors: Lastras-Martínez, L. F., Herrera-Jasso, R., Ulloa-Castillo, N. A., Balderas-Navarro, R. E., Lastras-Martínez, A., Lin, Angie C., Fejer, M. M., Harris, James S.
Format: Article
Language:English
Subjects:
Anisotropy
Applied physics
Epitaxial growth
Line shape
Line spectra
Optical properties
Reflectance
Scanning electron microscopy
Silicon substrates
Spectrum analysis
Topographic maps
Zincblende
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Summary:The integration of zincblende semiconductors on silicon demands for a real-time control of the crucial steps of epitaxial growth process at a microscopic level. Optical probes, being non-invasive, are very useful in monitoring such processes at a microscopic level. By using the reflectance anisotropy technique with microscopic resolution (μ-RD/RA), which detects the difference in reflectance for two orthogonal crystal directions, we measured the optical anisotropies below and above band gap of orientation-patterned GaP structures deposited on both Si(100) and GaP(100) vicinal substrates. We have developed a physical model to describe the line shape of the spectra below and above the fundamental gap of GaP. By using this model, we have successfully analyzed μ-RD/RA spectra, and we were able to do anisotropy topographic maps of the surface and buried interface, which are consistent to those measured with scanning electron microscopy.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4828737