Resistance memory device of La0.7Sr0.3MnO3 on Si nanotips template

Modifiable resistance switching (RS) is demonstrated in devices made of La0.7Sr0.3MnO3 (LSMO) on heavy-doped n-type silicon nanotips (n+-SiNTs) template. The high RS ratio of 900% with low switching voltage (±2 V) and read voltage (+0.1 V) prove the applicability of such devices for resistance memor...

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Bibliographic Details
Published in:Applied physics letters 2013-11, Vol.103 (21)
Main Authors: Chong, C. W., Huang, M. J., Han, H. C., Lin, Y. K., Chiu, J. M., Huang, Y. F., Lin, H. J., Pi, T. W., Lin, J. G., Chen, L. C., Chen, K. H., Chen, Y. F.
Format: Article
Language:English
Subjects:
Applied physics
Charge transfer
Computer memory
Electric potential
Insulators
Memory devices
Metal-insulator transition
Morphology
Silicon
Switching
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Summary:Modifiable resistance switching (RS) is demonstrated in devices made of La0.7Sr0.3MnO3 (LSMO) on heavy-doped n-type silicon nanotips (n+-SiNTs) template. The high RS ratio of 900% with low switching voltage (±2 V) and read voltage (+0.1 V) prove the applicability of such devices for resistance memory cells. The RS mechanism can be modulated from interfacial charge transfer to Mott metal-insulator transition, dependent on the number of defect state at the surface of LSMO in association with the morphology of SiNTs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4833515