Resistive switching characteristics of maghemite nanoparticle assembly on Al and Pt electrodes on a flexible substrate

Resistive switching characteristics of maghemite (γ-Fe2O3) nanoparticle assembly were investigated in structures of top-electrode (Al,Pt)/γ-Fe2O3-NPs (∼ 30 nm-thick)/bottom electrode (Al,Pt) on a flexible polyethersulfone substrate. The assembled NP layer with Al electrodes showed both unipolar and...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2012-06, Vol.45 (22), p.225304-1-8
Main Authors: Yoo, Jae Woo, Hu, Quanli, Baek, Yoon-Jae, Choi, Young Jin, Kang, Chi Jung, Lee, Hyun Ho, Lee, Do-Joong, Kim, Hyun-Mi, Kim, Ki-Bum, Yoon, Tae-Sik
Format: Article
Language:English
Subjects:
Aluminum
maghemite nanoparticle
memristor
resistive switching
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Resistive switching characteristics of maghemite (γ-Fe2O3) nanoparticle assembly were investigated in structures of top-electrode (Al,Pt)/γ-Fe2O3-NPs (∼ 30 nm-thick)/bottom electrode (Al,Pt) on a flexible polyethersulfone substrate. The assembled NP layer with Al electrodes showed both unipolar and bipolar switchings with abrupt resistance change in multiple levels associated with formation and sequential rupture of conducting filaments, which is ascribed to Fe enrichment by the interfacial reaction. On the other hand, the NP layer with Pt electrodes exhibited memristive switching with hysteresis in current-voltage characteristics dependent on bias polarity, gradually changing the resistance with respect to bias conditions, and preserved resistance until a new state was developed by subsequent biasing.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/45/22/225304