Structure–property relationship for sintered SiC by field assisted sintering technique

• Published in: International journal of refractory metals & hard materials 2013-03, Vol.37, p.33-39
• Main Authors: Gephart, Sean, Singh, Jogender, Kulkarni, Anil
• Format: Article
• Language: English
• Subjects: Carbon; Field assisted sintering; Pulse electric current sintering; Silicon carbide; Sintering; Spark plasma sintering
• ISSN: 0263-4368; 2213-3917
• DOI: 10.1016/j.ijrmhm.2012.10.013

This research is focused on utilizing the field assisted sintering technique (FAST) to produce dense SiC ceramic tiles and examine the sintering behavior of SiC with changing temperature, hold time, pressure, and heating rate. A preprocessed SiC powder with carbon and boron carbide additives and a mean particle size of 0.9μm were used to produce the SiC ceramic tiles. The sintered ceramic tiles were then characterized for material properties. Material properties were plotted as a function of processing parameter and optimum conditions were explored. Using the FAST process, this research showed that it was possible to sinter SiC in less than 30min to near theoretical densities. There was also no processing of powder or green sintering of any kind. The sintered ceramic tiles were characterized and the results showed the relationship between density, microhardness, and grain-size with respect to FAST processing parameters such as temperature, pressure and hold-time. Understanding this relationship will make it possible to tailor the material properties to fit the needs of a given application. ► Explored the sintering behavior of SiC by field assisted sintering technique ► Anisotropic grain growth and pore occlusion were observed together. ► Pore occlusion was not observed when sintering under high pressure.