Profile measurements of thin liquid films using reflectometry

Microscope-based reflectometry was used to measure the thickness profile of thin films of n-octane on silicon wafer substrates. Coupled with micro-positioning motorized stages and custom software, two-dimensional profiles of the film thickness from the adsorbed film (∼10 nm) to the intrinsic meniscu...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2013-11, Vol.103 (21)
Main Authors: Hanchak, M. S., Vangsness, M. D., Byrd, L. W., Ervin, J. S., Jones, J. G.
Format: Article
Language:English
Subjects:
Applied physics
Curvature
Film thickness
Reflectometry
Silicon substrates
Silicon wafers
Spatial resolution
Thickness measurement
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Microscope-based reflectometry was used to measure the thickness profile of thin films of n-octane on silicon wafer substrates. Coupled with micro-positioning motorized stages and custom software, two-dimensional profiles of the film thickness from the adsorbed film (∼10 nm) to the intrinsic meniscus (∼1000 nm) were automatically and repeatedly measured. The reflectometer aperture was modified to provide better spatial resolution in areas of high curvature, the transition region, where evaporative flux is at a maximum. This technique will provide data for the validation of both existing and future models of thin film evaporation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4833855