Room temperature epitaxial growth of (001) CeO sub(2) on (001) LaAlO sub(3) by pulsed laser deposition

The room temperature epitaxial growth of CeO sub(2) on lattice matched (001) LaAlO sub(3) substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po sub(2)) is demonstrated. X-ray diffraction analysis with 2-Theta/rocking curve/Phi-scan, cross-sectional transm...

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Published in:Crystal research and technology (1979) 2013-05, Vol.48 (5), p.308-313
Main Authors: Ho, Yen-Teng, Chang, Kuo-Shu, Liu, Kou-Chen, Hsieh, Li-Zen, Liang, Mei-Hui
Format: Article
Language:English
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Summary:The room temperature epitaxial growth of CeO sub(2) on lattice matched (001) LaAlO sub(3) substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po sub(2)) is demonstrated. X-ray diffraction analysis with 2-Theta/rocking curve/Phi-scan, cross-sectional transmission electron microscopy with selected-area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO sub(2) can be achieved at room temperature under Po sub(2) less than 2 10 super(-3) Torr. The best quality of grown film is obtained under Po sub(2) = 2 10 super(-5) Torr and degraded under Po sub(2) = 2 10 super(-6) Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO sub(2) and LAO is confirmed to be (001)CeO sub(2) //(001)LAO, [100] sub(CeO2)//[110] sub(LAO) and [010] sub(CeO2)//[[Formulaomitted]10] sub(LAO). No obvious reduction reaction occurred, from Ce super(+4) turned into Ce super(+3) states, as reducing oxygen partial pressure during growth by PLD. The room temperature epitaxial growth of CeO sub(2) on lattice matched (001) LaAlO sub(3) substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po sub(2)) is demonstrated. X-ray diffraction analysis with 2-Theta/rocking curve/Phi-scan, cross-sectional transmission electron microscopy with selected-area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO sub(2) can be achieved at room temperature under Po sub(2) less than 2 10 super(-3) Torr. The best quality of grown film is obtained under Po sub(2) = 2 10 super(-5) Torr and degraded under Po sub(2) = 2 10 super(-6) Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO sub(2) and LAO is confirmed to be (001)CeO sub(2) //(001)LAO, [100] sub(CeO2)//[110] sub(LAO) and [010] sub(CeO2)//[110] sub(LAO). No obvious reduction reaction occurred, from Ce super(+4) turned into Ce super(+3) states, as reducing oxygen partial pressure during growth by PLD.
ISSN:0232-1300
1521-4079
DOI:10.1002/crat.201300002