Blue shift of GaAs micropillars strained with silicon nitride

Strain engineering has been shown to induce shifts in the band structure of semiconductors. In this work, we demonstrate a blue shift in the band gap of GaAs micropillars of greater than 50 meV using SiNx. GaAs micropillars were fabricated and conformally coated with highly strained SiNx. The band g...

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Bibliographic Details
Published in:Applied physics letters 2013-11, Vol.103 (21)
Main Authors: Voss, L. F., Shao, Q., Conway, A. M., Reinhardt, C. E., Laurence, T. A., Nikolic, R. J.
Format: Article
Language:English
Subjects:
Applied physics
Band spectra
Blue shift
Energy gap
Gallium arsenide
Photoluminescence
Raman spectroscopy
Silicon nitride
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Summary:Strain engineering has been shown to induce shifts in the band structure of semiconductors. In this work, we demonstrate a blue shift in the band gap of GaAs micropillars of greater than 50 meV using SiNx. GaAs micropillars were fabricated and conformally coated with highly strained SiNx. The band gap and strain state of the micropillars were measured using room temperature photoluminescence and Raman spectroscopy. The GaAs was shown to be in uniaxial compression, leading to a linear increase in the band gap. Removal of the strained layer resulted in relaxation back to the unstrained state.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4831798