Resistive switching in iron-oxide-filled carbon nanotubes

Iron-oxide-filled carbon nanotubes exhibit an intriguing charge bipolarization behavior which allows the material to be applied in resistive memory devices. Raman analysis conducted with an electric field applied in situ shows the Kohn anomalies and a strong modification of the electronic properties...

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Bibliographic Details
Published in:Nanoscale 2014-01, Vol.6 (1), p.378-384
Main Authors: Cava, Carlos E, Persson, Clas, Zarbin, Aldo J. G, Roman, Lucimara S
Format: Article
Language:English
Subjects:
Augmented-Wave Method
Carbon nanotubes
Charge
Electric charge
Electric fields
Electrical-Properties
Electronics
Hydrogen
Insulators
Lithium-Ion Battery
Nanocomposites
Nanomaterials
Nanoparticles
Nanostructure
Nanotubes
Oxide
Oxygen
Temperature
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Summary:Iron-oxide-filled carbon nanotubes exhibit an intriguing charge bipolarization behavior which allows the material to be applied in resistive memory devices. Raman analysis conducted with an electric field applied in situ shows the Kohn anomalies and a strong modification of the electronic properties related to the applied voltage intensity. In addition, the I D / I G ratio indicated the reversibility of this process. The electrical characterization indicated an electronic transport governed by two main kinds of charge hopping, one between the filling and the nanotube and the other between the nanotube shells. Here the iron-oxide-filled carbon nanotubes, which exhibit an intriguing charge bipolarization, are applied as resistive memory devices.
ISSN:2040-3364
2040-3372
2040-3372
DOI:10.1039/c3nr04320g