Integrated One Diode―One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-et...

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Bibliographic Details
Published in:Nano letters 2014-02, Vol.14 (2), p.813-818
Main Authors: LI JI, CHANG, Yao-Feng, LEE, Jack C, FOWLER, Burt, CHEN, Ying-Chen, TSAI, Tsung-Ming, CHANG, Kuan-Chang, CHEN, Min-Chen, CHANG, Ting-Chang, SZE, Simon M, YU, Edward T
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of nanofabrication
Nanolithography
Nanoscale pattern formation
Physics
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Summary:We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl404160u