A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices

The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive swi...

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Published in:Nanoscale 2014-03, Vol.6 (5), p.2613-2617
Main Authors: Geresdi, Attila, Csontos, Miklós, Gubicza, Agnes, Halbritter, András, Mihály, György
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container_issue 5
container_start_page 2613
container_title Nanoscale
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creator Geresdi, Attila
Csontos, Miklós
Gubicza, Agnes
Halbritter, András
Mihály, György
description The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive switching on the nanosecond time scale. Utilizing point contact Andreev reflection spectroscopy, we studied the nature of electron transport in the active volume of memristive junctions showing that both the ON and OFF states correspond to truly nanometer-scale, highly transparent metallic channels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale memory cells which can be switched by nanosecond voltage pulses.
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fullrecord <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_proquest_miscellaneous_1499141894</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1499141894</sourcerecordid><originalsourceid>FETCH-LOGICAL-p247t-fcfd5fb89f75a2dc5a769f165971cf359c94fecd48dc7c72dc72109df1de17bf3</originalsourceid><addsrcrecordid>eNo1kLtOwzAYRi0kREth4QGQR5aAb4ljtqriJlViAObI_W23Ro4TbAeJtycSZfrOcHSGD6ErSm4p4eoOeEykblqmT9CSEUEqziVboPOcPwlpFG_4GVowIVrKuFqicY2dzgUPo026-CHiweGo49DbYlOVQQeLZ9YheJihTz6XIeV7fPD7Q_jBJemYR51sLBiGaCYoOoLFcNAx2pCxj3i9Z2_Y2G8PNl-gU6dDtpfHXaGPx4f3zXO1fX162ay31ciELJUDZ2q3a5WTtWYGai0b5WhTK0nB8VqBEs6CEa0BCXI2JKNEGUeNpXLn-Ard_HXHNHxNNpeu9xlsCDraYcodFUpRQVslZvX6qE673ppuTL7X6af7f4n_AgDWadc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1499141894</pqid></control><display><type>article</type><title>A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices</title><source>Royal Society of Chemistry Journals</source><creator>Geresdi, Attila ; Csontos, Miklós ; Gubicza, Agnes ; Halbritter, András ; Mihály, György</creator><creatorcontrib>Geresdi, Attila ; Csontos, Miklós ; Gubicza, Agnes ; Halbritter, András ; Mihály, György</creatorcontrib><description>The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive switching on the nanosecond time scale. Utilizing point contact Andreev reflection spectroscopy, we studied the nature of electron transport in the active volume of memristive junctions showing that both the ON and OFF states correspond to truly nanometer-scale, highly transparent metallic channels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale memory cells which can be switched by nanosecond voltage pulses.</description><identifier>EISSN: 2040-3372</identifier><identifier>DOI: 10.1039/c3nr05682a</identifier><identifier>PMID: 24481239</identifier><language>eng</language><publisher>England</publisher><ispartof>Nanoscale, 2014-03, Vol.6 (5), p.2613-2617</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/24481239$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Geresdi, Attila</creatorcontrib><creatorcontrib>Csontos, Miklós</creatorcontrib><creatorcontrib>Gubicza, Agnes</creatorcontrib><creatorcontrib>Halbritter, András</creatorcontrib><creatorcontrib>Mihály, György</creatorcontrib><title>A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices</title><title>Nanoscale</title><addtitle>Nanoscale</addtitle><description>The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive switching on the nanosecond time scale. Utilizing point contact Andreev reflection spectroscopy, we studied the nature of electron transport in the active volume of memristive junctions showing that both the ON and OFF states correspond to truly nanometer-scale, highly transparent metallic channels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale memory cells which can be switched by nanosecond voltage pulses.</description><issn>2040-3372</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNo1kLtOwzAYRi0kREth4QGQR5aAb4ljtqriJlViAObI_W23Ro4TbAeJtycSZfrOcHSGD6ErSm4p4eoOeEykblqmT9CSEUEqziVboPOcPwlpFG_4GVowIVrKuFqicY2dzgUPo026-CHiweGo49DbYlOVQQeLZ9YheJihTz6XIeV7fPD7Q_jBJemYR51sLBiGaCYoOoLFcNAx2pCxj3i9Z2_Y2G8PNl-gU6dDtpfHXaGPx4f3zXO1fX162ay31ciELJUDZ2q3a5WTtWYGai0b5WhTK0nB8VqBEs6CEa0BCXI2JKNEGUeNpXLn-Ard_HXHNHxNNpeu9xlsCDraYcodFUpRQVslZvX6qE673ppuTL7X6af7f4n_AgDWadc</recordid><startdate>20140307</startdate><enddate>20140307</enddate><creator>Geresdi, Attila</creator><creator>Csontos, Miklós</creator><creator>Gubicza, Agnes</creator><creator>Halbritter, András</creator><creator>Mihály, György</creator><scope>NPM</scope><scope>7X8</scope></search><sort><creationdate>20140307</creationdate><title>A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices</title><author>Geresdi, Attila ; Csontos, Miklós ; Gubicza, Agnes ; Halbritter, András ; Mihály, György</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p247t-fcfd5fb89f75a2dc5a769f165971cf359c94fecd48dc7c72dc72109df1de17bf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Geresdi, Attila</creatorcontrib><creatorcontrib>Csontos, Miklós</creatorcontrib><creatorcontrib>Gubicza, Agnes</creatorcontrib><creatorcontrib>Halbritter, András</creatorcontrib><creatorcontrib>Mihály, György</creatorcontrib><collection>PubMed</collection><collection>MEDLINE - Academic</collection><jtitle>Nanoscale</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Geresdi, Attila</au><au>Csontos, Miklós</au><au>Gubicza, Agnes</au><au>Halbritter, András</au><au>Mihály, György</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices</atitle><jtitle>Nanoscale</jtitle><addtitle>Nanoscale</addtitle><date>2014-03-07</date><risdate>2014</risdate><volume>6</volume><issue>5</issue><spage>2613</spage><epage>2617</epage><pages>2613-2617</pages><eissn>2040-3372</eissn><abstract>The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive switching on the nanosecond time scale. Utilizing point contact Andreev reflection spectroscopy, we studied the nature of electron transport in the active volume of memristive junctions showing that both the ON and OFF states correspond to truly nanometer-scale, highly transparent metallic channels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale memory cells which can be switched by nanosecond voltage pulses.</abstract><cop>England</cop><pmid>24481239</pmid><doi>10.1039/c3nr05682a</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record>
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title A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T14%3A50%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20fast%20operation%20of%20nanometer-scale%20metallic%20memristors:%20highly%20transparent%20conductance%20channels%20in%20Ag2S%20devices&rft.jtitle=Nanoscale&rft.au=Geresdi,%20Attila&rft.date=2014-03-07&rft.volume=6&rft.issue=5&rft.spage=2613&rft.epage=2617&rft.pages=2613-2617&rft.eissn=2040-3372&rft_id=info:doi/10.1039/c3nr05682a&rft_dat=%3Cproquest_pubme%3E1499141894%3C/proquest_pubme%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-p247t-fcfd5fb89f75a2dc5a769f165971cf359c94fecd48dc7c72dc72109df1de17bf3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1499141894&rft_id=info:pmid/24481239&rfr_iscdi=true