Gate-Voltage-Controlled Spin and Valley Polarization Transport in a Normal/Ferromagnetic/Normal MoS2 Junction

• Published in: ACS applied materials & interfaces 2014-02, Vol.6 (3), p.1759-1764
• Main Authors: Li, Hai, Shao, Jianmei, Yao, Daoxin, Yang, Guowei
• Format: Article
• Language: English
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/am4047602

Two-dimensional (2D) materials are extensively explored due to the remarkable physical property and the great potential for post-silicon electronics since the landmark achievement of graphene. The monolayer (ML) MoS2 with a direct energy gap is a typical 2D material and promising candidate for a wide range of device applications. The extensive efforts so far have focused on the optical valley control applications of ML MoS2 rather than the electrical control of spin and valley transport. However, the electrical manipulation of spin injection and transport is essential to realize practical spintronics applications. Here, we theoretically demonstrated that the valley and spin transport can be electrically manipulated by a gate voltage in a normal/ferromagnetic/normal monolayer MoS2 junction device. It was found that the fully valley- and spin-polarized conductance can be achieved due to the spin–valley coupling of valence-band edges together with the exchange field, and both the amplitude and direction of the fully spin-polarized conductance can be modulated by the gate voltage. These findings not only provided deep understanding to the basic physics in the spin and valley transport of ML MoS2 but also opened an avenue for the electrical control of valley and spin transport in monolayer dichalco­genide-based devices.