A single adiabatic microring-based laser in 220 nm silicon-on-insulator

We demonstrate a laser for the silicon photonics platform by hybrid integration with a III/V reflective semiconductor optical amplifier coupled to a 220 nm silicon-on-insulator half-cavity. We utilize a novel ultra-thin silicon edge coupler. A single adiabatic microring based inline reflector is use...

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Bibliographic Details
Published in:Optics express 2014-01, Vol.22 (1), p.1172-1180
Main Authors: Yang, Shuyu, Zhang, Yi, Grund, David W, Ejzak, Garret A, Liu, Yang, Novack, Ari, Prather, Dennis, Lim, Andy Eu-Jin, Lo, Guo-Qiang, Baehr-Jones, Tom, Hochberg, Michael
Format: Article
Language:English
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Summary:We demonstrate a laser for the silicon photonics platform by hybrid integration with a III/V reflective semiconductor optical amplifier coupled to a 220 nm silicon-on-insulator half-cavity. We utilize a novel ultra-thin silicon edge coupler. A single adiabatic microring based inline reflector is used to select a lasing mode, as compared to the multiple rings and Bragg gratings used in many previous results. Despite the simplified design, the laser was measured to have on-chip 9.8 mW power, less than 220 KHz linewidth, over 45 dB side mode suppression ratio, less than -135 dB/Hz relative intensity noise, and 2.7% wall plug efficiency.
ISSN:1094-4087
1094-4087
DOI:10.1364/oe.22.001172