2-Dimensional Transition Metal Dichalcogenides with Tunable Direct Band Gaps: MoS2(1-x)Se2x Monolayers

MoS2(1−x) Se2x single‐layer films are prepared using a mixture of organic selenium and sulfur precursors as well as a solid molybdenum source. The direct bandgaps are found to scale nearly linearly with composition in the range of 1.87 eV (pure single‐layer MoS2) to 1.55 eV (pure single‐layer MoSe2)...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2014-03, Vol.26 (9), p.1399-1404
Main Authors: Mann, John, Ma, Quan, Odenthal, Patrick M., Isarraraz, Miguel, Le, Duy, Preciado, Edwin, Barroso, David, Yamaguchi, Koichi, von Son Palacio, Gretel, Nguyen, Andrew, Tran, Tai, Wurch, Michelle, Nguyen, Ariana, Klee, Velveth, Bobek, Sarah, Sun, Dezheng, Heinz, Tony. F., Rahman, Talat S., Kawakami, Roland, Bartels, Ludwig
Format: Article
Language:English
Subjects:
alloys
atomically thin films
bandgap engineering
CVD
molybdenum diselenide
molybdenum disulfide
transition metal dichalcogenides
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Summary:MoS2(1−x) Se2x single‐layer films are prepared using a mixture of organic selenium and sulfur precursors as well as a solid molybdenum source. The direct bandgaps are found to scale nearly linearly with composition in the range of 1.87 eV (pure single‐layer MoS2) to 1.55 eV (pure single‐layer MoSe2) permitting straightforward bandgap engineering.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201304389