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Optimized fabrication of sputter deposited Cu2ZnSnS4 (CZTS) thin films

► Precursor CZTS films are non-stoichiometric with binary sulfide phases. ► Cu-capping (140nm) on precursor CZTS provides near stoichiometric films. ► Raman spectroscopy reveals the formation of CZTS phase after Cu-capping. ► Cu-capped CZTS samples show an improved Cu/(Zn+Sn) ratio of ∼0.71. An effe...

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Bibliographic Details
Published in:Solar energy 2013-05, Vol.91, p.196-203
Main Authors: Inamdar, A.I., Lee, Seulgi, Jeon, Ki-Young, Lee, Chong Ha, Pawar, S.M., Kalubarme, R.S., Park, Chan Jin, Im, Hyunsik, Jung, Woong, Kim, Hyungsang
Format: Article
Language:English
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Summary:► Precursor CZTS films are non-stoichiometric with binary sulfide phases. ► Cu-capping (140nm) on precursor CZTS provides near stoichiometric films. ► Raman spectroscopy reveals the formation of CZTS phase after Cu-capping. ► Cu-capped CZTS samples show an improved Cu/(Zn+Sn) ratio of ∼0.71. An effective synthesis strategy is employed to fabricate Cu2ZnSnS4 (CZTS) thin films using radio frequency (rf) magnetron sputtering technique on soda lime glass substrates. The as-grown films are annealed at different temperatures ranging between 350 and 550°C, and their chemical compositions and structural properties are investigated. The as-grown films have poor Cu/(Zn+Sn) ratios ranging between 0.39 and 0.44 and S/(Cu+Zn+Sn) ratios ranging between 0.97 and 1.21. The Cu/(Zn+Sn) ratio is improved by growing a thin additional Cu-capping layer on the as-grown film followed by annealing. An improved Cu/(Zn+Sn) ratio of ∼0.71 is obtained and the S/(Cu+Zn+Sn) ratio is slightly reduced to ∼0.85. The formation of a kesterite type CZTS is confirmed using X-ray diffraction and Raman spectroscopy measurements. Absorption measurements and band-gap energy determination of the CZTS films are carried out in order to confirm applicability to solar cells.
ISSN:0038-092X
1471-1257
DOI:10.1016/j.solener.2013.02.003