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Fabrication and characterization of high efficiency green nanopillar LED

InGaN/GaN green multiple quantum well (MQW) nanopillar light emitting diodes (LEDs), ∼150nm in diameter and 700nm in height, were fabricated by inductively coupled plasma etching using a Ni self-assembled nano-size mask. 2.5- and 7-fold improvement in the photoluminescence intensity was recorded for...

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Bibliographic Details
Published in:Journal of crystal growth 2013-05, Vol.370, p.332-335
Main Authors: Ju, Jin-Woo, Hyeob Baek, Jong, Lee, Seung-Jae, Jeon, Dae-Woo, Park, Jae-Woo, Choi, Jung-Hun, Jang, Lee-Woon, Lee, In-Hwan
Format: Article
Language:English
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Summary:InGaN/GaN green multiple quantum well (MQW) nanopillar light emitting diodes (LEDs), ∼150nm in diameter and 700nm in height, were fabricated by inductively coupled plasma etching using a Ni self-assembled nano-size mask. 2.5- and 7-fold improvement in the photoluminescence intensity was recorded for the 515 and 543nm green LED sample, respectively. Since the size and the shape of both samples were similar, it is believed that the higher In content LEDs would produce more strain relaxation through the fabrication of a nanopillar. ► The green MQW nanopillar LEDs were fabricated by ICP etching using a Ni nano-size mask. ► The PL intensity of the 515 and 543nm sample showed 2.5 and 7 times improvement, respectively. ► Bigger enhancement of a longer wavelength sample was caused by more strain relaxation. ► At the same wavelength, nanopillar showed a superior PL intensity compared with conventional sample.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2012.08.051