Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers

• Published in: Journal of crystal growth 2013-05, Vol.370, p.265-268
• Main Authors: Ma, Jun, Zhu, Xueliang, Wong, Ka Ming, Zou, Xinbo, Lau, Kei May
• Format: Article
• Language: English
• Subjects: A1 Crystal structure; A1. Defects; A1. Stresses; A3. Metalorganic vapor phase epitaxy; Aluminum nitride; Applied sciences; B1. Nitrides; B3. Light emitting diodes; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystal structure; Defects and impurities in crystals; microstructure; Electronics; Exact sciences and technology; Gallium nitrides; Interlayers; Light-emitting diodes; Linear defects: dislocations, disclinations; Materials science; Methods of crystal growth; physics of crystal growth; Optical properties; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Optoelectronic devices; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon substrates; Structure of solids and liquids; crystallography; Superlattices; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2012.10.028

We report the growth of high crystalline quality GaN-based light emitting diodes (LEDs) on Si (111) substrates with AlN/GaN superlattice interlayer for both stress and dislocation engineering. A focused study involved comparison of different interlayer structures including low-temperature AlN, medium-temperature AlN multilayers and AlN/GaN supperlattice for optimization of the LED performance. The results show that the AlN/GaN supperlattice interlayer is the most effective in reducing the residual tensile stress and improving the crystalline quality of GaN on Si. With the AlN/GaN superlattice interlayer, optical properties of the LEDs were enhanced and optical output power of unpackaged LED chips on Si substrates was improved by 24%. ► High-performance GaN-based LEDs grown on Si (111) substrates using MOVPE. ► Different interlayer structures for LEDs compared. ► AlN/GaN superlattice interlayer can improve stress state and reduce dislocations. ► LEDs output power enhanced by 24%.