Dynamic chemical polishing of undoped and doped ZnSe crystals with H2O2-HBr-H2O solutions

We have studied the chemical interaction of the surface of undoped and doped ZnSe crystals with H 2 O 2 -HBr-H 2 O bromine-releasing solutions. The dissolution rate of the semiconductor materials has been measured as a function of etchant composition, stirring rate, temperature, and doping. The comp...

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Bibliographic Details
Published in:Inorganic materials 2013-10, Vol.49 (10), p.971-974
Main Authors: Tomashik, V. N., Kravtsova, A. S., Tomashik, Z. F., Stratiichuk, I. B., Galkin, S. N.
Format: Article
Language:English
Subjects:
Chemical etching
Chemistry
Chemistry and Materials Science
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Materials Science
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Summary:We have studied the chemical interaction of the surface of undoped and doped ZnSe crystals with H 2 O 2 -HBr-H 2 O bromine-releasing solutions. The dissolution rate of the semiconductor materials has been measured as a function of etchant composition, stirring rate, temperature, and doping. The composition region of polishing solutions has been mapped out, and the surface condition after chemical etching has been examined by microstructural analysis. We have proposed and optimized polishing etchant compositions and conditions for chemical polishing of the semiconductors.
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168513100129