Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates

• Published in: Journal of crystal growth 2013-11, Vol.382, p.80-86
• Main Authors: Kelchner, Kathryn M., Kuritzky, Leah Y., Fujito, Kenji, Nakamura, Shuji, DenBaars, Steven P., Speck, James S.
• Format: Article
• Language: English
• Subjects: A1. Crystal morphology; A3. Metal organic chemical vapor deposition; Applied sciences; B1. Nitrides; B2. Semiconducting III–V materials; B3. Light emitting diodes; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Crystal growth; Electronics; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Nanoscale materials and structures: fabrication and characterization; Optoelectronic devices; Other topics in nanoscale materials and structures; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2013.08.013

InGaN single quantum wells (SQWs) grown on m-plane bulk GaN substrates show significant differences in peak emission wavelength when grown on substrates oriented nominally on-axis compared to substrates with small intentional misorientations (miscuts) towards the orthogonal −c-direction or a-direction. SQWs on substrates intentionally miscut toward the a-direction emit longer wavelengths than those with miscuts towards the −c-direction in a variety of identical growth conditions, while SQWs on nominally on-axis m-plane with pyramidal hillocks features display emission characteristics of both. These preliminary co-loaded growth studies may provide insight into broad or anomalous wavelength emission observed on nonpolar GaN-based visible light emitters and suggest opportunities for improving LED and laser diode device performance on this naturally occurring crystal plane. •We examine emission characteristics of InGaN quantum wells on misoriented m-plane substrates.•Blue quantum wells on on-axis m-plane substrates show broad and dual wavelength emission and non-uniform in incorporation.•Substrates misoriented in the c- or a-direction lead to smoother film morphologies and more uniform quantum well emission.•Substrates misoriented in the a-direction show much higher In incorporation than other m-plane substrate orientations and longer emission wavelengths.