Epitaxial growth of nonpolar ZnO on MgO (100) substrate by molecular beam epitaxy

• Published in: Journal of crystal growth 2013-09, Vol.378, p.172-176
• Main Authors: Lu, C.-Y.J., Chang, L., Ploog, K.H., Chou, M.M.C.
• Format: Article
• Language: English
• Subjects: A1. Characterization; A1. Transmission electron microscopy; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. ZnO; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Crystal growth; Crystals; Deviation; Epitaxial growth; Exact sciences and technology; Lattices; Magnesium oxide; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beam epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Zinc oxide
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2012.12.163

Nonpolar (101̄0)-oriented ZnO was grown epitaxially on (100)MgO substrate by plasma-assisted molecular beam epitaxy at a high substrate temperature of 600°C. The epilayer was composed of four variant domains which have an orientation relationship with the substrate as: (101̄0)ZnO//(100)MgO and ZnO∼// MgO with a ±1.5° deviation. By introducing a Zn0.4Mg0.6O buffer layer, the lattice mismatch was eliminated almost completely based on the extended coincidence lattice model. The crystal quality is therefore improved and the epilayer shows good photoluminescence characteristics. ► Nonpolar (101̄0)-oriented ZnO was grown epitaxially on (100)MgO substrate by MBE. ► The epilayer was composed of four variant domains. ► The crystal quality was improved by introducing a Zn0.4Mg0.6O buffer layer.