Performance of gas source MBE grown InAlGaAs photovoltaic detectors tailored to 1.4μm

• Published in: Journal of crystal growth 2013-09, Vol.378, p.579-582
• Main Authors: Zhou, L., Gu, Y., Zhang, Y.G., Wang, K., Fang, X., Cao, Y.Y., Li, A.Z., Li, Hsby
• Format: Article
• Language: English
• Subjects: A3. Molecular beam epitaxy; Applied sciences; B2. Semiconducting III–V materials; B3. Infrared devices; Bias; Cross-disciplinary physics: materials science; rheology; Crystal growth; Dark current; Devices; Electronics; Energy; Exact sciences and technology; Materials science; Mesas; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beam epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Natural energy; Optoelectronic devices; Photodetectors; Photodiodes; Photovoltaic conversion; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Solar cells. Photoelectrochemical cells; Solar energy; Wavelengths
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2012.12.159

InAlGaAs photodiodes with 50% cut-off wavelength of 1.41μm at room temperature have been grown by using gas source MBE with convenient and reliable procedure, and the performances have been characterized in detail. The InAlGaAs absorption layer shows a mismatch of −8×10−5 to the InP substrate with a full width at half maximum of around 20arcs. Dark current of 247pA at reverse bias of 10mV and zero bias resistance of 41MΩ has been measured for the devices at room temperature with 200μm mesa diameter. The dark current of this InAlGaAs photodetector is about 20 times lower than the In0.53Ga0.47As photodetector with similar structure processed at the same time. ► A photodetector tailored to 1.4μm has been demonstrated by using InAlGaAs. ► The dark current of this InAlGaAs detector is lower than that of In0.53Ga0.47As detector. ► R0A reached a relatively high value which was also measured at room temperature.