Al-enhanced N incorporation in GaNAs alloys grown by chemical beam epitaxy

The N incorporation is studied in AlGaNAs with low Al content grown by chemical beam epitaxy at low temperature using dimethylhydrazine as the N precursor. The incorporation efficiency is significantly enhanced by introducing a relatively low Al concentration. The relation between the N incorporatio...

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Bibliographic Details
Published in:Journal of crystal growth 2013-10, Vol.380, p.256-260
Main Authors: Kolhatkar, Gitanjali, Boucherif, Abderraouf, Valdivia, Christopher E., Wallace, Steven G., Fafard, Simon, Aimez, Vincent, Arès, Richard
Format: Article
Language:English
Subjects:
A1. Nitrogen incorporation
A3. Chemical beam epitaxy
Alloys
Aluminum
Applied sciences
B1. Dilute nitrides
B2. AlGaNAs
B3. Solar cells
Cross-disciplinary physics: materials science
rheology
Crystal growth
Crystals
Dimethylhydrazines
Energy
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Molecular beam epitaxy
Natural energy
Photovoltaic conversion
Physics
Solar cells. Photoelectrochemical cells
Solar energy
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
Three dimensional
Two dimensional
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Summary:The N incorporation is studied in AlGaNAs with low Al content grown by chemical beam epitaxy at low temperature using dimethylhydrazine as the N precursor. The incorporation efficiency is significantly enhanced by introducing a relatively low Al concentration. The relation between the N incorporation and N/(N+As) flow ratio for Al concentrations of 0–15% is presented. The highest N incorporation and the best AlGaNAs crystal quality are obtained between 400°C and 440°C, where the growth mode starts to change from 2D to 3D. The activation energies for N incorporation in both the 2D and 3D growth mode regions are extracted. •N incorporation is significantly enhanced by Al in dilute nitrides.•The crystal quality and the N incorporation are optimized between 400°C and 440°C.•3D growth mode is suppressed at low temperature improving crystalline quality.•Growth temperature study reveals two distinct temperature dependent regions.•Activation energies of the two regions are extracted using Arrhenius equation.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2013.06.024