Gas-source MBE growth of strain-relaxed Si1axCx on Si(100) substrates

The hole effective mass in a compressively strained Si formed on a (100) surface is expected to be low. The growth of a high quality strain-relaxed Si1axCx increases the possibility of high performance electronic devices using compressively strained Si film. In this study, growth conditions and thei...

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Bibliographic Details
Published in:Journal of crystal growth 2013-09, Vol.378, p.212-217
Main Authors: Arimoto, Keisuke, Sakai, Shoichiro, Furukawa, Hiroshi, Yamanaka, Junji, Nakagawa, Kiyokazu, Usami, Noritaka, Hoshi, Yusuke, Sawano, Kentarou, Shiraki, Yasuhiro
Format: Article
Language:English
Subjects:
Carbon
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Summary:The hole effective mass in a compressively strained Si formed on a (100) surface is expected to be low. The growth of a high quality strain-relaxed Si1axCx increases the possibility of high performance electronic devices using compressively strained Si film. In this study, growth conditions and their influence on microstructural aspects of Si1axCx grown by gas-source molecular beam epitaxy were studied. Disilane and trimethylsilane were used as source gases. It was found that the strain-relaxation process and defect formation were influenced not only by substrate temperature but also by flow rates of the source gases. Relationships between the morphological aspects and non-substitutional carbon concentration were studied.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2012.12.152