Preparation and capacitance behavior of manganese oxide hollow structures with different morphologies via template-engaged redox etching

• Published in: Journal of power sources 2013-10, Vol.239, p.347-355
• Main Authors: Gu, Yan, Cai, Jianwei, He, Mingze, Kang, Liping, Lei, Zhibin, Liu, Zong-Huai
• Format: Article
• Language: English
• Subjects: Amorphous materials; AMORPHOUS STRUCTURE; Capacitance; Chemistry; COPPER OXIDE; Cu2O sacrificial templates; CUPROUS OXIDE; Electrochemistry; Electrode materials; Etching; Exact sciences and technology; General and physical chemistry; Manganese oxides; MnO2 hollow structure; OXIDES; Redox etching; Scanning electron microscopy; Specific surface; X RAYS
• ISSN: 0378-7753; 1873-2755
• DOI: 10.1016/j.jpowsour.2013.03.125

A variety of amorphous manganese oxide electrode materials with uniform nonspherical hollow interiors are prepared via sacrificial template-engaged redox etching of the corresponding shape-controlled Cu2O nanocrystals in KMnO4 aqueous solution at room temperature. The obtained materials are characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy and N2 adsorption–desorption. The amorphous manganese oxide hollow materials not only well inherit the size and shape of Cu2O nonspherical precursor, but also show a manganese average oxidation state of 3.7 and large specific surface area (about 198 m2 g−1). The electrochemical measurements show that the capacitance of the as-prepared amorphous manganese oxide electrode materials with uniform nonspherical hollow interiors is connects with their specific surface area. The amorphous manganese oxide star hollow architecture exhibits not only high specific capacitance of 366 F g−1 at a scan rate of 5 mV s−1, but also relatively good cycle stability (93.1% capacitance retention after 1000 cycles at a scan rate of 20 mV s−1), which make it have a potential application as a supercapacitor electrode material. A variety of MnOx electrode materials with uniform nonspherical hollow interiors are successfully prepared via sacrificial template-engaged redox etching of the shape-controlled corresponding Cu2O nanocrystals in KMnO4 solution at room temperature. The as-prepared amorphous manganese oxide hollow star architecture shows not only a large area of 198 m2 g−1, but also an ideal capacitive behavior with a specific capacitance of 366 F g−1 in a neutral electrolyte system at a scan rate of 5 mV s−1. [Display omitted] •Amorphous manganese oxide hollow interiors are prepared by a redox etching process.•Star-shaped amorphous manganese oxide hollow interiors show large specific surface area of 198 m2 g−1.•Capacitance of amorphous manganese oxide electrodes is connects with the specific surface area.•Star-shaped amorphous manganese oxide hollow star electrode exhibits high specific capacitance of 366 F g−1.