Luminescent properties of MBE-grown Si:Er/SOI structures

Here we report on luminescent properties of multilayer Si:Er structures grown by sublimation molecular-beam epitaxy on “silicon-on-insulator” substrates. We demonstrate formation in such structures of a unique erbium-related center Er-1. This optical complex stands out among other known erbium-relat...

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Bibliographic Details
Published in:Journal of luminescence 2012-12, Vol.132 (12), p.3148-3150
Main Authors: Andreev, B.A., Krasilnik, Z.F., Kryzhkov, D.I., Shengurov, D.V., Yablonskiy, A.N., Kuznetsov, V.P.
Format: Article
Language:English
Subjects:
Cross sections
Erbium-doped Si
Light-emitting Er centers
Luminescence
Molecular beam epitaxy
Multilayers
Silicon
SOI
Stands
Stimulated emission
Sublimation
Sublimation MBE
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Summary:Here we report on luminescent properties of multilayer Si:Er structures grown by sublimation molecular-beam epitaxy on “silicon-on-insulator” substrates. We demonstrate formation in such structures of a unique erbium-related center Er-1. This optical complex stands out among other known erbium-related centers in silicon for its record narrow luminescent line (
ISSN:0022-2313
1872-7883
DOI:10.1016/j.jlumin.2011.11.025