Study of the impact of doping concentration and Schottky barrier height on ohmic contacts to n-type germanium

Ohmic contacts to n-type germanium have been fabricated and a very low specific contact resistance has been obtained using laser annealing activation of the implanted dopant atoms. A model is presented to understand the current mechanism at the metal/germanium interface, and to study the impact of t...

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Bibliographic Details
Published in:Microelectronic engineering 2013-06, Vol.106, p.129-131
Main Authors: Firrincieli, A., Martens, K., Simoen, E., Claeys, C., Kittl, J.A.
Format: Article
Language:English
Subjects:
Activation
Applied sciences
Barriers
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Contact resistance
Contact resistance, contact potential
Dopants
Doping
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Electronics
Exact sciences and technology
Germanium
Interfaces
Laser beam annealing
Microelectronics
Ohmic contacts
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Surface double layers, schottky barriers, and work functions
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Description
Summary:Ohmic contacts to n-type germanium have been fabricated and a very low specific contact resistance has been obtained using laser annealing activation of the implanted dopant atoms. A model is presented to understand the current mechanism at the metal/germanium interface, and to study the impact of the doping concentration and Schottky barrier height on the specific contact resistance of the ohmic contacts.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2012.12.020