The effect of annealing atmosphere on the (HfO2)0.9(Al2O3)0.1 based charge trapping nonvolatile memory

Charge trapping flash memory devices using (HfO2)0.9(Al2O3)0.1 as the charge trapping layer were fabricated, and the effect of post-annealing atmospheres (NH3 and N2) on its charge storage characteristics was investigated. It was found that NH3 annealed memory device showed a larger memory window of...

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Bibliographic Details
Published in:Vacuum 2014-01, Vol.99, p.17-21
Main Authors: Tang, Z.J., Li, R., Yu, F.J.
Format: Article
Language:English
Subjects:
Annealing
Annealing atmosphere
Atmospheres
Atomic layer deposition
Charge
Charge trap
Conduction band
Data storage
Flash memory (computers)
Memory devices
Thin films
Trapping
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Summary:Charge trapping flash memory devices using (HfO2)0.9(Al2O3)0.1 as the charge trapping layer were fabricated, and the effect of post-annealing atmospheres (NH3 and N2) on its charge storage characteristics was investigated. It was found that NH3 annealed memory device showed a larger memory window of 7.3 V and improved data retention even at 85 °C compared to N2 annealed memory devices. The enhanced memory characteristics should be attributed to deep level bulk charge traps induced in the charge trapping layer by NH3 annealing. In addition, the large conduction band offset value between tunneling layer and charge trapping layer also resulted in good retention performance. •(HfO2)0.9(Al2O3)0.1film based charge trap flash memory devices have been prepared.•NH3 annealed device has improved endurance and retention characteristics.•The good retention performance was attributed to deep level bulk traps.•Larger conduction band offset also lead to enhanced retention performance.•We depicted the band alignment of the memory devices.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2013.05.010