Solvothermal preparation and fluorescent properties of color-tunable InP/ZnS quantum dots

• Published in: Journal of luminescence 2013-02, Vol.134, p.798-805
• Main Authors: Lee, Ju Chul, Jang, Eun-Pyo, Jang, Dong Seon, Choi, Yoonyoung, Choi, Moongoo, Yang, Heesun
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Diffraction; Exact sciences and technology; Fluorescent attributes; Ii-vi semiconductors; Indium phosphides; InP/ZnS core/shell; Luminescence; Materials science; Nanoscale materials and structures: fabrication and characterization; Optical properties; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Phosphorus source; Photoluminescence; Physics; Quantum dots; Shells; Solvothermal; X-rays; Zinc sulfides
• ISSN: 0022-2313; 1872-7883
• DOI: 10.1016/j.jlumin.2012.06.046

This work reports on the solvothermal preparation and optical properties of InP core and InP/ZnS core/shell quantum dots (QDs). InP QDs are synthesized using a phosphorus (P) source of tris(dimethylamino)phosphine (P(N(CH3)2)3) under the solvothermal conditions in the range of reaction temperature of 120–180°C and reaction time of 12h−1 week to tune their size. ZnS shelling is also solvothermally performed by varying the shell growth temperature from 180 to 220°C for 6h, and then respective InP and InP/ZnS QDs are subjected to the size-sorting procedure. Effects of the shelling temperature on the fluorescent attributes (emission peak wavelength, bandwidth, and quantum yield) of the resulting size-sorted InP/ZnS QD fractions are investigated. The qualitative information on the shell thickness as a function of shelling temperature is furthermore provided by x-ray diffraction and x-ray photoelectron spectroscopy. ► InP/ZnS core/shell QDs are prepared using a P source of P(N(CH3)2)3 by a stepwise solvothermal approach. ► Widely emission-tuable InP/ZnS QDs are realized by varying the solvothermal condition for core QD growth. ► Effects of ZnS shelling temperature on fluorescent properties of InP/ZnS QDs are investigated.