Influence of cadmium content on the microstructure characteristics of dip coated nanocrystalline Zn1axCdxS (0 less than or equal to x less than or equal to 0.9) and their heterojunction applications

Nanocrystalline Zn1axCdxS (0 less than or equal to x less than or equal to 0.9) thin films were prepared by dip-coating method. The compositional analyses were made by the energy dispersive X-ray technique (EDX). X-ray diffraction analyses (XRD) of the prepared samples were performed to investigate...

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Bibliographic Details
Published in:Superlattices and microstructures 2013-10, Vol.62, p.97-109
Main Authors: Roushdy, N, Farag, AAM, Rafea, M, El-Shazly, O, El-Wahidy, E F
Format: Article
Language:English
Subjects:
Cadmium
Crystallites
Heterojunctions
Mathematical models
Microstructure
Nanocrystals
Scanning electron microscopy
Transmission electron microscopy
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Summary:Nanocrystalline Zn1axCdxS (0 less than or equal to x less than or equal to 0.9) thin films were prepared by dip-coating method. The compositional analyses were made by the energy dispersive X-ray technique (EDX). X-ray diffraction analyses (XRD) of the prepared samples were performed to investigate the crystalline structure and determine the main structural parameters using WilliamsonaHall (WaH) model. The surface morphology and crystalline structure of nanocrystalline Zn1axCdxS thin films were studied using the scanning electron microscopy (SEM) and transmission electron microscopy (TEM), respectively. The estimated average crystallite size of Zn1axCdxS by WaH analysis were compared with TEM results. It is found that the average crystallite size measured by WaH analysis is in good agreement with TEM results. The Capacitance-voltage (C-V) characteristics of n-Zn1axCdxS/p-Si heterojunction were measured at different temperatures ranging from 300 to 400 K under dark condition. The dependence of Ca2 on V for the heterojunctions was found to be almost linear which indicates that the prepared heterojunctions are abrupt and then the essential junction parameters were obtained. The built-in potential (Vb), the donor carrier concentration (ND) and the width of the depletion region (W) were studied as a function of Cd-content.
ISSN:0749-6036
DOI:10.1016/j.spmi.2013.07.008