Loading…
Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode
We proposed a new, simpler, and fully BEOL CMOS-compatible TiN/HfO2/TiN RRAM stack using the Plasma Enhanced Atomic Layer Deposition (PEALD) for the top-electrode TiN processing, demonstrating attractive bipolar switching properties (by positive RESET voltage to the PEALD TiN) in a functional size d...
Saved in:
| Published in: | Microelectronic engineering 2013-12, Vol.112, p.92-96 |
|---|---|
| Main Authors: | , , , , , , , , , , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | cdi_FETCH-LOGICAL-c360t-5238b6d180611fbb3f9e46bf5e6c2ac27965ad87c632f7525d2025dbdf4752663 |
|---|---|
| cites | cdi_FETCH-LOGICAL-c360t-5238b6d180611fbb3f9e46bf5e6c2ac27965ad87c632f7525d2025dbdf4752663 |
| container_end_page | 96 |
| container_issue | |
| container_start_page | 92 |
| container_title | Microelectronic engineering |
| container_volume | 112 |
| creator | Chen, Y.Y. Goux, L. Pantisano, L. Swerts, J. Adelmann, C. Mertens, S. Afanasiev, V.V. Wang, X.P. Govoreanu, B. Degraeve, R. Kubicek, S. Paraschiv, V. Verbrugge, B. Jossart, N. Altimime, L. Jurczak, M. Kittl, J. Groeseneken, G. Wouters, D.J. |
| description | We proposed a new, simpler, and fully BEOL CMOS-compatible TiN/HfO2/TiN RRAM stack using the Plasma Enhanced Atomic Layer Deposition (PEALD) for the top-electrode TiN processing, demonstrating attractive bipolar switching properties (by positive RESET voltage to the PEALD TiN) in a functional size down to 2275nm2 (35nm×65nm). Stable switching was observed between a High-Resistive State HRS (∼1MΩ) and a Low-Resistive State LRS (∼100kΩ), using a low program current of ∼1μA. Two different LRS states can be obtained depending on the current compliance (CC) during SET switching, either 100μA (high-CC LRS) or 10μA (low-CC LRS), resulting, respectively in LRS resistances of 10kΩ or 100kΩ. The projected retention stability of low-CC LRS is ⩾10years at 80°C, which is the retention minimum of the TiN/HfO2/TiN RRAM stack. The temperature-dependent resistance showed a non-metallic behavior for the low-CC LRS state (∼100kΩ), suggesting gentle filament formation. |
| doi_str_mv | 10.1016/j.mee.2013.02.087 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1513479278</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167931713001986</els_id><sourcerecordid>1513479278</sourcerecordid><originalsourceid>FETCH-LOGICAL-c360t-5238b6d180611fbb3f9e46bf5e6c2ac27965ad87c632f7525d2025dbdf4752663</originalsourceid><addsrcrecordid>eNp9kEtP3DAUhS3USkyBH9CdN0iwSMaPiZ2I1YjSgjQ8RKnUneU418KjZBzs0Ipu-te500FdsvH1kc49V-cj5DNnJWdczdflAFAKxmXJRMlqvUdmvNayqCpVfyAz9OiikVzvk085rxnqBatn5O93Z3vo6M-itYk-hJv5pb8Vc_zQ-_vlNXXQ95mOKTrIGX2_w_RI4ziFIfxBOfY2D5bC5tFuHGo7xSE42tsXSLSDMeYwhbihJ3cXy9WXU-rjvyMUenBTih0cko_e9hmO3uYB-fH14uH8sljdfrs6X64KJxWbikrIulUdr5ni3Let9A0sVOsrUE5YJ3SjKtvV2ikpvK5E1QmGT9v5BSql5AE52eViladnyJMZQt6WsxuIz9nwisuFboSu0cp3Vpdizgm8GVMYbHoxnJktbLM2CNtsYRsmDMLGneO3eJsRqE-II-T_ixirGs4F-s52PsCuvwIkk12ALbqQkIjpYnjnyis9PpMS</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1513479278</pqid></control><display><type>article</type><title>Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode</title><source>ScienceDirect Freedom Collection 2022-2024</source><creator>Chen, Y.Y. ; Goux, L. ; Pantisano, L. ; Swerts, J. ; Adelmann, C. ; Mertens, S. ; Afanasiev, V.V. ; Wang, X.P. ; Govoreanu, B. ; Degraeve, R. ; Kubicek, S. ; Paraschiv, V. ; Verbrugge, B. ; Jossart, N. ; Altimime, L. ; Jurczak, M. ; Kittl, J. ; Groeseneken, G. ; Wouters, D.J.</creator><creatorcontrib>Chen, Y.Y. ; Goux, L. ; Pantisano, L. ; Swerts, J. ; Adelmann, C. ; Mertens, S. ; Afanasiev, V.V. ; Wang, X.P. ; Govoreanu, B. ; Degraeve, R. ; Kubicek, S. ; Paraschiv, V. ; Verbrugge, B. ; Jossart, N. ; Altimime, L. ; Jurczak, M. ; Kittl, J. ; Groeseneken, G. ; Wouters, D.J.</creatorcontrib><description>We proposed a new, simpler, and fully BEOL CMOS-compatible TiN/HfO2/TiN RRAM stack using the Plasma Enhanced Atomic Layer Deposition (PEALD) for the top-electrode TiN processing, demonstrating attractive bipolar switching properties (by positive RESET voltage to the PEALD TiN) in a functional size down to 2275nm2 (35nm×65nm). Stable switching was observed between a High-Resistive State HRS (∼1MΩ) and a Low-Resistive State LRS (∼100kΩ), using a low program current of ∼1μA. Two different LRS states can be obtained depending on the current compliance (CC) during SET switching, either 100μA (high-CC LRS) or 10μA (low-CC LRS), resulting, respectively in LRS resistances of 10kΩ or 100kΩ. The projected retention stability of low-CC LRS is ⩾10years at 80°C, which is the retention minimum of the TiN/HfO2/TiN RRAM stack. The temperature-dependent resistance showed a non-metallic behavior for the low-CC LRS state (∼100kΩ), suggesting gentle filament formation.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2013.02.087</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Bipolar switching ; Deposition ; Design. Technologies. Operation analysis. Testing ; Electric potential ; Electrodes ; Electronics ; Exact sciences and technology ; Hafnium oxide ; HfO2 ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Microelectronic fabrication (materials and surfaces technology) ; PEALD TiN ; Plasma pre-treatment ; RRAM ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Stacks ; Switching ; Tin ; Voltage</subject><ispartof>Microelectronic engineering, 2013-12, Vol.112, p.92-96</ispartof><rights>2013 Elsevier B.V.</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c360t-5238b6d180611fbb3f9e46bf5e6c2ac27965ad87c632f7525d2025dbdf4752663</citedby><cites>FETCH-LOGICAL-c360t-5238b6d180611fbb3f9e46bf5e6c2ac27965ad87c632f7525d2025dbdf4752663</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27869112$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Chen, Y.Y.</creatorcontrib><creatorcontrib>Goux, L.</creatorcontrib><creatorcontrib>Pantisano, L.</creatorcontrib><creatorcontrib>Swerts, J.</creatorcontrib><creatorcontrib>Adelmann, C.</creatorcontrib><creatorcontrib>Mertens, S.</creatorcontrib><creatorcontrib>Afanasiev, V.V.</creatorcontrib><creatorcontrib>Wang, X.P.</creatorcontrib><creatorcontrib>Govoreanu, B.</creatorcontrib><creatorcontrib>Degraeve, R.</creatorcontrib><creatorcontrib>Kubicek, S.</creatorcontrib><creatorcontrib>Paraschiv, V.</creatorcontrib><creatorcontrib>Verbrugge, B.</creatorcontrib><creatorcontrib>Jossart, N.</creatorcontrib><creatorcontrib>Altimime, L.</creatorcontrib><creatorcontrib>Jurczak, M.</creatorcontrib><creatorcontrib>Kittl, J.</creatorcontrib><creatorcontrib>Groeseneken, G.</creatorcontrib><creatorcontrib>Wouters, D.J.</creatorcontrib><title>Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode</title><title>Microelectronic engineering</title><description>We proposed a new, simpler, and fully BEOL CMOS-compatible TiN/HfO2/TiN RRAM stack using the Plasma Enhanced Atomic Layer Deposition (PEALD) for the top-electrode TiN processing, demonstrating attractive bipolar switching properties (by positive RESET voltage to the PEALD TiN) in a functional size down to 2275nm2 (35nm×65nm). Stable switching was observed between a High-Resistive State HRS (∼1MΩ) and a Low-Resistive State LRS (∼100kΩ), using a low program current of ∼1μA. Two different LRS states can be obtained depending on the current compliance (CC) during SET switching, either 100μA (high-CC LRS) or 10μA (low-CC LRS), resulting, respectively in LRS resistances of 10kΩ or 100kΩ. The projected retention stability of low-CC LRS is ⩾10years at 80°C, which is the retention minimum of the TiN/HfO2/TiN RRAM stack. The temperature-dependent resistance showed a non-metallic behavior for the low-CC LRS state (∼100kΩ), suggesting gentle filament formation.</description><subject>Applied sciences</subject><subject>Bipolar switching</subject><subject>Deposition</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric potential</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Hafnium oxide</subject><subject>HfO2</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>PEALD TiN</subject><subject>Plasma pre-treatment</subject><subject>RRAM</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Stacks</subject><subject>Switching</subject><subject>Tin</subject><subject>Voltage</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kEtP3DAUhS3USkyBH9CdN0iwSMaPiZ2I1YjSgjQ8RKnUneU418KjZBzs0Ipu-te500FdsvH1kc49V-cj5DNnJWdczdflAFAKxmXJRMlqvUdmvNayqCpVfyAz9OiikVzvk085rxnqBatn5O93Z3vo6M-itYk-hJv5pb8Vc_zQ-_vlNXXQ95mOKTrIGX2_w_RI4ziFIfxBOfY2D5bC5tFuHGo7xSE42tsXSLSDMeYwhbihJ3cXy9WXU-rjvyMUenBTih0cko_e9hmO3uYB-fH14uH8sljdfrs6X64KJxWbikrIulUdr5ni3Let9A0sVOsrUE5YJ3SjKtvV2ikpvK5E1QmGT9v5BSql5AE52eViladnyJMZQt6WsxuIz9nwisuFboSu0cp3Vpdizgm8GVMYbHoxnJktbLM2CNtsYRsmDMLGneO3eJsRqE-II-T_ixirGs4F-s52PsCuvwIkk12ALbqQkIjpYnjnyis9PpMS</recordid><startdate>20131201</startdate><enddate>20131201</enddate><creator>Chen, Y.Y.</creator><creator>Goux, L.</creator><creator>Pantisano, L.</creator><creator>Swerts, J.</creator><creator>Adelmann, C.</creator><creator>Mertens, S.</creator><creator>Afanasiev, V.V.</creator><creator>Wang, X.P.</creator><creator>Govoreanu, B.</creator><creator>Degraeve, R.</creator><creator>Kubicek, S.</creator><creator>Paraschiv, V.</creator><creator>Verbrugge, B.</creator><creator>Jossart, N.</creator><creator>Altimime, L.</creator><creator>Jurczak, M.</creator><creator>Kittl, J.</creator><creator>Groeseneken, G.</creator><creator>Wouters, D.J.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20131201</creationdate><title>Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode</title><author>Chen, Y.Y. ; Goux, L. ; Pantisano, L. ; Swerts, J. ; Adelmann, C. ; Mertens, S. ; Afanasiev, V.V. ; Wang, X.P. ; Govoreanu, B. ; Degraeve, R. ; Kubicek, S. ; Paraschiv, V. ; Verbrugge, B. ; Jossart, N. ; Altimime, L. ; Jurczak, M. ; Kittl, J. ; Groeseneken, G. ; Wouters, D.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c360t-5238b6d180611fbb3f9e46bf5e6c2ac27965ad87c632f7525d2025dbdf4752663</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Applied sciences</topic><topic>Bipolar switching</topic><topic>Deposition</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electric potential</topic><topic>Electrodes</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Hafnium oxide</topic><topic>HfO2</topic><topic>Integrated circuits</topic><topic>Integrated circuits by function (including memories and processors)</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>PEALD TiN</topic><topic>Plasma pre-treatment</topic><topic>RRAM</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Stacks</topic><topic>Switching</topic><topic>Tin</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Y.Y.</creatorcontrib><creatorcontrib>Goux, L.</creatorcontrib><creatorcontrib>Pantisano, L.</creatorcontrib><creatorcontrib>Swerts, J.</creatorcontrib><creatorcontrib>Adelmann, C.</creatorcontrib><creatorcontrib>Mertens, S.</creatorcontrib><creatorcontrib>Afanasiev, V.V.</creatorcontrib><creatorcontrib>Wang, X.P.</creatorcontrib><creatorcontrib>Govoreanu, B.</creatorcontrib><creatorcontrib>Degraeve, R.</creatorcontrib><creatorcontrib>Kubicek, S.</creatorcontrib><creatorcontrib>Paraschiv, V.</creatorcontrib><creatorcontrib>Verbrugge, B.</creatorcontrib><creatorcontrib>Jossart, N.</creatorcontrib><creatorcontrib>Altimime, L.</creatorcontrib><creatorcontrib>Jurczak, M.</creatorcontrib><creatorcontrib>Kittl, J.</creatorcontrib><creatorcontrib>Groeseneken, G.</creatorcontrib><creatorcontrib>Wouters, D.J.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Y.Y.</au><au>Goux, L.</au><au>Pantisano, L.</au><au>Swerts, J.</au><au>Adelmann, C.</au><au>Mertens, S.</au><au>Afanasiev, V.V.</au><au>Wang, X.P.</au><au>Govoreanu, B.</au><au>Degraeve, R.</au><au>Kubicek, S.</au><au>Paraschiv, V.</au><au>Verbrugge, B.</au><au>Jossart, N.</au><au>Altimime, L.</au><au>Jurczak, M.</au><au>Kittl, J.</au><au>Groeseneken, G.</au><au>Wouters, D.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode</atitle><jtitle>Microelectronic engineering</jtitle><date>2013-12-01</date><risdate>2013</risdate><volume>112</volume><spage>92</spage><epage>96</epage><pages>92-96</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>We proposed a new, simpler, and fully BEOL CMOS-compatible TiN/HfO2/TiN RRAM stack using the Plasma Enhanced Atomic Layer Deposition (PEALD) for the top-electrode TiN processing, demonstrating attractive bipolar switching properties (by positive RESET voltage to the PEALD TiN) in a functional size down to 2275nm2 (35nm×65nm). Stable switching was observed between a High-Resistive State HRS (∼1MΩ) and a Low-Resistive State LRS (∼100kΩ), using a low program current of ∼1μA. Two different LRS states can be obtained depending on the current compliance (CC) during SET switching, either 100μA (high-CC LRS) or 10μA (low-CC LRS), resulting, respectively in LRS resistances of 10kΩ or 100kΩ. The projected retention stability of low-CC LRS is ⩾10years at 80°C, which is the retention minimum of the TiN/HfO2/TiN RRAM stack. The temperature-dependent resistance showed a non-metallic behavior for the low-CC LRS state (∼100kΩ), suggesting gentle filament formation.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2013.02.087</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2013-12, Vol.112, p.92-96 |
| issn | 0167-9317 1873-5568 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1513479278 |
| source | ScienceDirect Freedom Collection 2022-2024 |
| subjects | Applied sciences Bipolar switching Deposition Design. Technologies. Operation analysis. Testing Electric potential Electrodes Electronics Exact sciences and technology Hafnium oxide HfO2 Integrated circuits Integrated circuits by function (including memories and processors) Microelectronic fabrication (materials and surfaces technology) PEALD TiN Plasma pre-treatment RRAM Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stacks Switching Tin Voltage |
| title | Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T22%3A10%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Scaled%20X-bar%20TiN/HfO2/TiN%20RRAM%20cells%20processed%20with%20optimized%20plasma%20enhanced%20atomic%20layer%20deposition%20(PEALD)%20for%20TiN%20electrode&rft.jtitle=Microelectronic%20engineering&rft.au=Chen,%20Y.Y.&rft.date=2013-12-01&rft.volume=112&rft.spage=92&rft.epage=96&rft.pages=92-96&rft.issn=0167-9317&rft.eissn=1873-5568&rft.coden=MIENEF&rft_id=info:doi/10.1016/j.mee.2013.02.087&rft_dat=%3Cproquest_cross%3E1513479278%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c360t-5238b6d180611fbb3f9e46bf5e6c2ac27965ad87c632f7525d2025dbdf4752663%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1513479278&rft_id=info:pmid/&rfr_iscdi=true |