Study of the effect of tunneling through the traps inside the insulator on small-signal admittance of the MOS structure

[Display omitted] •Theoretical model of MOS tunnel which includes small-signal response of insulator traps is presented.•An influence of geometric and energy positions of the insulator traps on admittance parameters of MOS diode is studied.•Comparison between measured and simulated admittance parame...

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Bibliographic Details
Published in:Microelectronic engineering 2013-09, Vol.109, p.1-4
Main Authors: Jasiński, Jakub, Mazurak, Andrzej, Majkusiak, Bogdan
Format: Article
Language:English
Subjects:
Admittance
Admittance model
Aluminum
Electrical impedance
Insulator traps
Insulators
Mathematical models
Metal oxide semiconductors
Microelectronics
MOS tunnel diode
Tunnel diodes
Tunneling
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Summary:[Display omitted] •Theoretical model of MOS tunnel which includes small-signal response of insulator traps is presented.•An influence of geometric and energy positions of the insulator traps on admittance parameters of MOS diode is studied.•Comparison between measured and simulated admittance parameters of MOS structure is shown. The effect of tunneling through traps located inside the insulator layer on the small-signal admittance parameters of the MOS tunnel diode is investigated by means of the theoretical model. An influence of geometric and energy positions of the traps is studied. The model and considerations are confirmed by a comparison with measurement data of an experimental Al–SiO2–Si structure.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2013.03.087