Generation of memory B cells inside and outside germinal centers

Germinal centers (GCs) are generally considered to be the sole site of memory B‐cell generation. However, recent studies demonstrate that memory B cells can also develop in response to a T‐cell dependent (TD) antigen before the onset, and independently of, the GC reaction. These two classes of memor...

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Bibliographic Details
Published in:European journal of immunology 2014-05, Vol.44 (5), p.1258-1264
Main Authors: Takemori, Toshitada, Kaji, Tomohiro, Takahashi, Yoshimasa, Shimoda, Michiko, Rajewsky, Klaus
Format: Article
Language:English
Subjects:
Animals
B-Lymphocytes - cytology
B-Lymphocytes - immunology
B cell development
B cells
Cell Differentiation - physiology
Germinal Center - cytology
Germinal Center - immunology
Humans
Immunologic Memory - physiology
Memory cells
T-Lymphocytes, Helper-Inducer - cytology
T-Lymphocytes, Helper-Inducer - immunology
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Summary:Germinal centers (GCs) are generally considered to be the sole site of memory B‐cell generation. However, recent studies demonstrate that memory B cells can also develop in response to a T‐cell dependent (TD) antigen before the onset, and independently of, the GC reaction. These two classes of memory cells persist equally over long periods of time and attain functional maturation through distinct but related transcriptional programs. Although the development of both memory B‐cell types requires classical T‐cell help, the generation of GC‐dependent memory B cells requires TFH‐cell help, while the generation of GC‐independent memory cells does not. These findings led to the conclusion that B‐cell memory is generated along two fundamentally distinct cellular differentiation pathways. In this review, we focus on the GC‐independent pathway of memory B‐cell development, and discuss how the unique features of memory B cells are maintained in the GC‐independent pathway.
ISSN:0014-2980
1521-4141
DOI:10.1002/eji.201343716