Advantages of GaN based light-emitting diodes with p-AlGaN/InGaN superlattice last quantum barrier

The advantages of GaN based light-emitting diodes (LEDs) with strain-compensated p-AlGaN/InGaN superlattice (SL) last quantum barrier (LQB) are investigated numerically. The simulation results indicate that the output power and internal quantum efficiency have been improved significantly by replacin...

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Bibliographic Details
Published in:Optics communications 2014-02, Vol.312, p.85-88
Main Authors: Xiong, Jian-Yong, Xu, Yi-Qin, Zheng, Shu-Wen, Zhao, Fang, Ding, Bin-Bin, Song, Jing-Jing, Yu, Xiao-Peng, Zhang, Tao, Fan, Guang-Han
Format: Article
Language:English
Subjects:
AlGaN/InGaN superlattice
Banded structure
Barriers
Bending
Confinement
Efficiency droop
Gallium nitrides
Indium gallium nitrides
Light-emitting diodes
Numerical simulation
Superlattices
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Summary:The advantages of GaN based light-emitting diodes (LEDs) with strain-compensated p-AlGaN/InGaN superlattice (SL) last quantum barrier (LQB) are investigated numerically. The simulation results indicate that the output power and internal quantum efficiency have been improved significantly by replacing the last barrier of the conventional u-GaN and p-GaN with p-AlGaN/InGaN SL. These improvements are mainly attributed to the improvement of electron confinement and hole injection efficiency caused by mitigating the polarization-induced band bending of last barrier with the new designed structure. Moreover, the efficiency droop of the LEDs is markedly improved by using p-AlGaN/InGaN SL as last barrier.
ISSN:0030-4018
1873-0310
DOI:10.1016/j.optcom.2013.08.053