Low-temperature growth of high c-orientated crystalline GaN films on amorphous Ni/glass substrates with ECR-PEMOCVD

• Published in: Journal of alloys and compounds 2014, Vol.583, p.39-42
• Main Authors: Zhong, M.M., Qin, F.W., Liu, Y.M., Wang, C., Bian, J.M., Wang, E.P., Wang, H., Zhang, D.
• Format: Article
• Language: English
• Subjects: Alloys; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Crystal structure; Electron cyclotron resonance; Exact sciences and technology; Gallium nitride (GaN); Gallium nitrides; Glass; Glass substrate; Illumination; Lighting; Low temperature growth; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nickel; Physics; Plasma-enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD)
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2013.08.153

A low temperature growth method based on electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) was proposed for the growth of GaN films on ordinary soda-lime glass substrates with Ni as intermediate layer. With this method, high c-orientated crystalline GaN films with atomically smooth surface were achieved on amorphous Ni/glass substrate at an extremely low temperature of ∼480°C. This GaN/Ni/glass structures have great potential for dramatically improve the scalability and cost of solid-state lighting, since the adverse effects with high temperature process for glass substrates can be effectively suppressed by this technique.