Magnetic field sensing characteristics of MgO based tunneling magnetoresistance devices with Co40Fe40B20 and Co60Fe20B20 electrodes

We developed spin valve tunneling magnetoresistance devices based on MgO barrier and two compositions of CoFeB electrodes capable of sensing magnetic field in tunable ranges with high sensitivity and low nonlinearity. The tunable field ranges are due to varying strength of perpendicular anisotropy i...

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 2013-11, Vol.202, p.64-68
Main Authors: Wiśniowski, P., Dąbek, M., Cardoso, S., Freitas, P.P.
Format: Article
Language:English
Subjects:
Detection
Devices
Electrodes
Magnesium oxide
Magnetic field sensing
Magnetic fields
Magnetoresistance
Magnetoresistivity
Nonlinearity
Sensing characteristics
Tunneling magnetoresistance devices
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Summary:We developed spin valve tunneling magnetoresistance devices based on MgO barrier and two compositions of CoFeB electrodes capable of sensing magnetic field in tunable ranges with high sensitivity and low nonlinearity. The tunable field ranges are due to varying strength of perpendicular anisotropy in a sensing electrode induced by changing its thickness. The sensing field ranges span from ±0.1mT to ±100mT. In the narrowest field range devices showed sensitivity up to 91%/mT and nonlinearity below 1.5% of full scale and in the widest field range sensitivity up to 0.076%/mT and nonlinearity below 2% of full scale. The sensing characteristics and their dependence on the electrode thickness suggest that these device structures are useful for design low to medium magnetic field sensors.
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2013.01.019