Monolithic ionizing particle detector based on active matrix of functionally integrated structures

•A new type of monolithic silicon position detector is presented.•An operating principle, design and technology of the detector are described.•Calculated estimations of the detecting efficiency are carried out.•Experimental results of alpha-particle and electron detection are shown. An operating pri...

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Bibliographic Details
Published in:Journal of alloys and compounds 2014-02, Vol.586, p.S553-S557
Main Authors: Murashev, V.N., Legotin, S.A., Karmanov, D.E., Baryshnikov, F.M., Didenko, S.I.
Format: Article
Language:English
Subjects:
Alloys
Amplification
Detectors
Electronics
High-voltage CMOS technology
Monolithic detector
Photons
Signal processing
Silicon
Silicon detector
Two dimensional
VLSI
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Description
Summary:•A new type of monolithic silicon position detector is presented.•An operating principle, design and technology of the detector are described.•Calculated estimations of the detecting efficiency are carried out.•Experimental results of alpha-particle and electron detection are shown. An operating principle, design and technology of a new type of the monolithic silicon position detector (MSPD) for registration of ionizing particles and photons are described. The detector represents a specialized monolithic silicon VLSI that contains a two-dimensional detecting matrix of active functionally integrated bipolar structures and peripheral electronic circuitry for signal amplification and processing. This paper presents experimental results of α-particles and electrons detection with position accuracy and operation speed better than 12.5μm and 1ns, respectively. The givenestimations show the capabilities of this detector and its advantages in comparison with analogs.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2013.04.032